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<p>High-sensitivity silicon carbide (SiC) piezoresistive pressure sensors often face limitations in achieving stable operation at 500&#xa0;°C, primarily attributed to the fabrication process of the sensitive diaphragm and the insulating performance of the high-temperature encapsulation. To address this challenge, this study employs a high-density inductively coupled plasma (ICP) dry etching method for SiC, utilizing thick nickel (Ni) metal masks. This approach successfully fabricated a sensitive diaphragm with a diameter of 1400&#xa0;μm and a minimum thickness of 47&#xa0;μm. A comprehensive process flow was established, which further optimizes the fabrication technology system for this type of sensitive diaphragm. Ceramic was used to replace glass in the encapsulation, and the inter-pin insulation resistance of the encapsulated sensor exceeded 50 MΩ at 500&#xa0;°C. Ultimately, the performance metrics of the sensor at 500&#xa0;°C are summarized as follows: Measurement range: 0–4&#xa0;MPa, Full-scale output (FSO): 66.6&#xa0;mV, Sensitivity: 3.33&#xa0;mV/V/MPa, Repeatability: 0.63%, Linearity: 0.63%, Hysteresis: 0.45%, Accuracy: 1%. This study provides a feasible technical approach for ensuring the long-term stable operation of high-temperature electrical sensors.</p>

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High-sensitivity 4H-SiC piezoresistive pressure sensor for stable operation at 500 °C: chip manufacturing and high-temperature packaging

  • 期刊论文

  • 发表日期：

    2026年2月18日

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  • Cheng Lei,
  • Bo Li,
  • Zhiqiang Li,
  • Jiangang Yu,
  • Pinggang Jia,
  • Yongwei Li,
  • Ruirui Li,
  • Fengchao Li,
  • Ting Liang

摘要

High-sensitivity silicon carbide (SiC) piezoresistive pressure sensors often face limitations in achieving stable operation at 500 °C, primarily attributed to the fabrication process of the sensitive diaphragm and the insulating performance of the high-temperature encapsulation. To address this challenge, this study employs a high-density inductively coupled plasma (ICP) dry etching method for SiC, utilizing thick nickel (Ni) metal masks. This approach successfully fabricated a sensitive diaphragm with a diameter of 1400 μm and a minimum thickness of 47 μm. A comprehensive process flow was established, which further optimizes the fabrication technology system for this type of sensitive diaphragm. Ceramic was used to replace glass in the encapsulation, and the inter-pin insulation resistance of the encapsulated sensor exceeded 50 MΩ at 500 °C. Ultimately, the performance metrics of the sensor at 500 °C are summarized as follows: Measurement range: 0–4 MPa, Full-scale output (FSO): 66.6 mV, Sensitivity: 3.33 mV/V/MPa, Repeatability: 0.63%, Linearity: 0.63%, Hysteresis: 0.45%, Accuracy: 1%. This study provides a feasible technical approach for ensuring the long-term stable operation of high-temperature electrical sensors.