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<p>This research investigates how incorporating quantum well (QW) layers influence the thermal behaviour of AlGaN/GaN high electron mobility transistors (HEMTs), which are widely used in high-power and high-frequency applications. Using Silvaco TCAD simulations, three device structures with one, two, and three GaN QWs in the channel were analysed over a wide temperature range from 25&#xa0;°C to 600&#xa0;°C to understand how heat impacts their electrical performance. Key DC characteristics such as threshold voltage (V<sub>th</sub>), drain current (I<sub>D</sub>), and transconductance (g<sub>m</sub>) were extracted at each temperature to track thermal degradation. At room temperature, adding more QWs enhanced quantum confinement, increased electron mobility, and improved current conduction. However, as temperature rose, all devices showed performance degradation due to increased phonon scattering and reduced carrier mobility. While devices with more QWs retained higher drain current under thermal stress, they also exhibited larger negative V<sub>th</sub> shifts and sharper gm reduction, which could compromise gate control and switching reliability at high temperatures. These findings highlight a clear trade-off between electrical performance and thermal stability, showing that although multiple QWs can boost performance at lower temperatures, they also make HEMTs more vulnerable to heat, emphasizing the need for careful design to balance efficiency and thermal robustness in GaN-based power electronics.</p>

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Thermal stability analysis of AlGaN/GaN HEMT with multiple quantum wells for emerging nanoelectronics

  • 期刊论文

  • 发表日期：

    2026年1月22日

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  • Padmakshya Kar,
  • Nitish Kumar,
  • E. Raghuveera,
  • Trupti R. Lenka,
  • Tanjim Rahman,
  • Injamamul H. Emu,
  • Hieu P. T. Nguyen,
  • Sudhanshu Choudhary

摘要

This research investigates how incorporating quantum well (QW) layers influence the thermal behaviour of AlGaN/GaN high electron mobility transistors (HEMTs), which are widely used in high-power and high-frequency applications. Using Silvaco TCAD simulations, three device structures with one, two, and three GaN QWs in the channel were analysed over a wide temperature range from 25 °C to 600 °C to understand how heat impacts their electrical performance. Key DC characteristics such as threshold voltage (Vth), drain current (ID), and transconductance (gm) were extracted at each temperature to track thermal degradation. At room temperature, adding more QWs enhanced quantum confinement, increased electron mobility, and improved current conduction. However, as temperature rose, all devices showed performance degradation due to increased phonon scattering and reduced carrier mobility. While devices with more QWs retained higher drain current under thermal stress, they also exhibited larger negative Vth shifts and sharper gm reduction, which could compromise gate control and switching reliability at high temperatures. These findings highlight a clear trade-off between electrical performance and thermal stability, showing that although multiple QWs can boost performance at lower temperatures, they also make HEMTs more vulnerable to heat, emphasizing the need for careful design to balance efficiency and thermal robustness in GaN-based power electronics.