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<p>Biosensors have become a part of modern-day healthcare diagnostics due to the potential for early and precise disease diagnosis. Tunnel Field Effect Transistor (TFET) based biosensors are among them, which have been under the spotlight due to their ultra-low power consumption and high sensitivity. This work investigates the impact of temperature (200–500&#xa0;K) and Interface Trap Charges (ITCs) on analog, RF, and linearity properties of a charge plasma-based Uniform TFET (UTFET) biosensor for NS1 protein detection. Asymmetrically structured (i.e. Drain-Scaled) UTFET yields better carrier confinement and lower dopant variability, offering improved performance under thermal and interface trap variations. Key sensitivity parameters are evaluated under such conditions. The temperature analysis indicates a drastic 12-order-of-magnitude reduction in the switching ratio as the temperature increases from 200&#xa0;K to 500&#xa0;K. Surprisingly, this loss is associated with considerable gain of critical device parameters, the g<sub>m</sub> of which grows by 311.58%, f<sub>T</sub> rises by 237.66% and GBP increases by 303.70%. These enhancements are primarily due to enhanced phonon scattering and increased Shockley-Read-Hall recombination at lower gate voltages. Alongside temperature analysis, the interface trap effects are also studied for positive, neutral and negative concentrations of 1 × 10<sup>12</sup> cm<sup>− 2</sup>. The presence of negative trap charges shows slight performance enhancement, while positive traps cause mild degradation in analog, RF, and linearity metrics demonstrating the biosensor’s high immunity to ITC effects. This makes the biosensor, a promising candidate for reliable biosensing under variable environmental conditions.</p>

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Temperature and interface trap-induced variations in RF analog and linearity performance of a drain-scaled Si/GaAs uniform tunnel FET dengue nano-biosensor

  • 期刊论文

  • 发表日期：

    2026年1月28日

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  • T. Ranjith Kumar,
  • G. Lakshmi Priya

摘要

Biosensors have become a part of modern-day healthcare diagnostics due to the potential for early and precise disease diagnosis. Tunnel Field Effect Transistor (TFET) based biosensors are among them, which have been under the spotlight due to their ultra-low power consumption and high sensitivity. This work investigates the impact of temperature (200–500 K) and Interface Trap Charges (ITCs) on analog, RF, and linearity properties of a charge plasma-based Uniform TFET (UTFET) biosensor for NS1 protein detection. Asymmetrically structured (i.e. Drain-Scaled) UTFET yields better carrier confinement and lower dopant variability, offering improved performance under thermal and interface trap variations. Key sensitivity parameters are evaluated under such conditions. The temperature analysis indicates a drastic 12-order-of-magnitude reduction in the switching ratio as the temperature increases from 200 K to 500 K. Surprisingly, this loss is associated with considerable gain of critical device parameters, the gm of which grows by 311.58%, fT rises by 237.66% and GBP increases by 303.70%. These enhancements are primarily due to enhanced phonon scattering and increased Shockley-Read-Hall recombination at lower gate voltages. Alongside temperature analysis, the interface trap effects are also studied for positive, neutral and negative concentrations of 1 × 1012 cm− 2. The presence of negative trap charges shows slight performance enhancement, while positive traps cause mild degradation in analog, RF, and linearity metrics demonstrating the biosensor’s high immunity to ITC effects. This makes the biosensor, a promising candidate for reliable biosensing under variable environmental conditions.