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<p>This paper reports on tuning the spectral response of an ultra-sensitive photodetector at zero bias across a wavelength range of 400&#xa0;nm to 1100&#xa0;nm (broadband) under the highest source intensity, and from 690&#xa0;nm to 790&#xa0;nm (narrowband) at the lowest source intensity. Optical filters are employed to block 60% and 95% of the source intensity to achieve these results. This van der Waals heterostructure (r-GO/MoS<sub>2</sub>/p<sup>+</sup>-Si)-based photodetector is fabricated using silver contacts deposited on two parallel pads of reduced graphene oxide coated on the multilayers of the MoS<sub>2</sub>/p<sup>+</sup>-Si substrate. The growth of multilayer &#xa0;&#xa0;2H-MoS<sub>2</sub> and the Reduced graphene oxide (r-GO) pad is analyzed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy to characterize the structural and chemical properties of the materials, confirming their quality and composition. The device’s I–V characteristics show quasi-linear behavior under various conditions, including light, dark, and ambient environments. Furthermore, it exhibits responsivity of 0.34&#xa0;A/W at 0&#xa0;V and 8.0&#xa0;A/W at 0.2 millivolt bias when exposed to incident light at a wavelength of 690&#xa0;nm with a minimum power density of 4.9 nW/cm². Additionally, we calculated a rise time of approximately 419 µs and a fall time of approximately 375 µs at a 288&#xa0;Hz chopper frequency, demonstrating the fast photo-response of this device. The device’s performance suggests potential applications in imaging, small-distance optical communication, and machine vision tasks.</p>

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r-GO/MoS2 heterostructures ultrasensitive self-powered photodetector operating in both narrowband and broadband regimes

  • 期刊论文

  • 发表日期：

    2025年9月5日

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  • Arun Barvat,
  • Prabir Pal,
  • Nisha Prakash,
  • Gaurav Kumar,
  • Manjri Singh,
  • Anjana Dogra

摘要

This paper reports on tuning the spectral response of an ultra-sensitive photodetector at zero bias across a wavelength range of 400 nm to 1100 nm (broadband) under the highest source intensity, and from 690 nm to 790 nm (narrowband) at the lowest source intensity. Optical filters are employed to block 60% and 95% of the source intensity to achieve these results. This van der Waals heterostructure (r-GO/MoS2/p+-Si)-based photodetector is fabricated using silver contacts deposited on two parallel pads of reduced graphene oxide coated on the multilayers of the MoS2/p+-Si substrate. The growth of multilayer   2H-MoS2 and the Reduced graphene oxide (r-GO) pad is analyzed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy to characterize the structural and chemical properties of the materials, confirming their quality and composition. The device’s I–V characteristics show quasi-linear behavior under various conditions, including light, dark, and ambient environments. Furthermore, it exhibits responsivity of 0.34 A/W at 0 V and 8.0 A/W at 0.2 millivolt bias when exposed to incident light at a wavelength of 690 nm with a minimum power density of 4.9 nW/cm². Additionally, we calculated a rise time of approximately 419 µs and a fall time of approximately 375 µs at a 288 Hz chopper frequency, demonstrating the fast photo-response of this device. The device’s performance suggests potential applications in imaging, small-distance optical communication, and machine vision tasks.