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<p>This paper examines the feasibility study on design and simulation of Silicon-Carbide MOSFET based Current Mirror Integrated Pressure Sensor (SiC-M-CMIPS) for harsh environment applications. The proposed pressure sensor integrates MOSFET embedded sensing technique, current mirror readout circuit and pressure sensing diaphragm on a 4H-SiC substrate. The pressure sensing system comprised of three 4H-SiC MOSFETs configured in a current mirror setup with resistive loading. In mirror circuit the input MOSFET is placed on the substrate, and acts as a constant current source as well as reference transistor. Two mirror output MOSFETs are embedded at the fixed edge and center of the pressure detection diaphragm and work as resistance sensing elements to detect tensile and compressive stresses developed in the deformed diaphragm under external applied pressure. The proposed SiC-M-CMIPS sensors’ mechanical and electrical behaviors are simulated using COMSOL Multiphysics and TSPICE software, respectively. The piezoresistive effect of 4H-SiC-based nMOS was used to calculate the variation in carrier mobility caused by strain under applied pressure. The simulations were performed for pressure ranging from 0 to 10 MPa at various temperatures ranging from <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="542_2025_5893_Article_IEq1.gif" Format="GIF" Height="14" Rendition="HTML" Resolution="72" Type="Linedraw" Width="25" /> </InlineMediaObject> <EquationSource Format="TEX">\(25^{\circ }\)</EquationSource> <EquationSource Format="MATHML"><math> <msup> <mn>25</mn> <mo>∘</mo> </msup> </math></EquationSource> </InlineEquation>C to <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="542_2025_5893_Article_IEq2.gif" Format="GIF" Height="14" Rendition="HTML" Resolution="72" Type="Linedraw" Width="33" /> </InlineMediaObject> <EquationSource Format="TEX">\(400^{\circ }\)</EquationSource> <EquationSource Format="MATHML"><math> <msup> <mn>400</mn> <mo>∘</mo> </msup> </math></EquationSource> </InlineEquation>C. The simulation result of the proposed sensor shows a pressure sensitivity of 0.3175 mV/MPa at room temperature. The pressure sensitivity of the sensor increases with temperature. Simulation result shows a pressure sensitivity of 44.01 mV/MPa at <InlineEquation ID="IEq3"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="542_2025_5893_Article_IEq2.gif" Format="GIF" Height="14" Rendition="HTML" Resolution="72" Type="Linedraw" Width="33" /> </InlineMediaObject> <EquationSource Format="TEX">\(400^{\circ }\)</EquationSource> <EquationSource Format="MATHML"><math> <msup> <mn>400</mn> <mo>∘</mo> </msup> </math></EquationSource> </InlineEquation>C. The temperature sensitivity of the sensor is found to be 0.8 mV/<InlineEquation ID="IEq4"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="542_2025_5893_Article_IEq4.gif" Format="GIF" Height="7" Rendition="HTML" Resolution="72" Type="Linedraw" Width="9" /> </InlineMediaObject> <EquationSource Format="TEX">\(^{\circ }\)</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mrow /> <mo>∘</mo> </mmultiscripts> </math></EquationSource> </InlineEquation>C for applied pressure of 10 MPa. These results show suitability of our pressure sensor for high pressure and temperature application, This study is a step forward in the designing and prototyping of integrated SiC based CMOS-MEMS pressure sensors for harsh environment applications.</p>

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Analytical study on the SiC-MOSFET current mirror integrated MEMS pressure sensor for harsh environment applications

  • 期刊论文

  • 发表日期：

    2025年6月10日

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  • Gaurav Kumar,
  • Shashi Kumar,
  • Menuvolu Tetseo,
  • Kalpana Gogoi,
  • Pradeep Rathore,
  • Kulwant Singh

摘要

This paper examines the feasibility study on design and simulation of Silicon-Carbide MOSFET based Current Mirror Integrated Pressure Sensor (SiC-M-CMIPS) for harsh environment applications. The proposed pressure sensor integrates MOSFET embedded sensing technique, current mirror readout circuit and pressure sensing diaphragm on a 4H-SiC substrate. The pressure sensing system comprised of three 4H-SiC MOSFETs configured in a current mirror setup with resistive loading. In mirror circuit the input MOSFET is placed on the substrate, and acts as a constant current source as well as reference transistor. Two mirror output MOSFETs are embedded at the fixed edge and center of the pressure detection diaphragm and work as resistance sensing elements to detect tensile and compressive stresses developed in the deformed diaphragm under external applied pressure. The proposed SiC-M-CMIPS sensors’ mechanical and electrical behaviors are simulated using COMSOL Multiphysics and TSPICE software, respectively. The piezoresistive effect of 4H-SiC-based nMOS was used to calculate the variation in carrier mobility caused by strain under applied pressure. The simulations were performed for pressure ranging from 0 to 10 MPa at various temperatures ranging from \(25^{\circ }\) 25 ∘ C to \(400^{\circ }\) 400 ∘ C. The simulation result of the proposed sensor shows a pressure sensitivity of 0.3175 mV/MPa at room temperature. The pressure sensitivity of the sensor increases with temperature. Simulation result shows a pressure sensitivity of 44.01 mV/MPa at \(400^{\circ }\) 400 ∘ C. The temperature sensitivity of the sensor is found to be 0.8 mV/ \(^{\circ }\) ∘ C for applied pressure of 10 MPa. These results show suitability of our pressure sensor for high pressure and temperature application, This study is a step forward in the designing and prototyping of integrated SiC based CMOS-MEMS pressure sensors for harsh environment applications.