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<p>SnO<sub>2</sub>-TiO<sub>2</sub> nanowire (NW) was fabricated at room temperature (25&#xa0;°C) using Glancing Angle Deposition (GLAD) technique for photodetector application. The XRD peak of the sample reveals the formation of amorphous TiO<sub>2</sub> and polycrystalline SnO<sub>2</sub>. FE-SEM image confirms the formation of vertically aligned SnO<sub>2</sub>-TiO<sub>2</sub> heterostructure with porous morphology. The device exhibited a photoresponsivity (𝑅) of 0.14&#xa0;A/W with a detectivity of 1.48 × 10<sup>11</sup> Jones under 405&#xa0;nm wavelength at -3&#xa0;V. Moreover, the device exhibits a rise time of 0.13&#xa0;s and a fall time of 0.52&#xa0;s. The photo-response characteristics can be attributed to the photoinduced charge transfer in the interface between TiO<sub>2</sub> and SnO<sub>2</sub> and large surface area of the vertically aligned nanocolumn morphology. These results suggest that SnO<sub>2</sub>-TiO<sub>2</sub> fabricated using GLAD hold significant potential for high performance UV photodetectors.</p>

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High performance UV photodetector based on SnO2-TiO2 heterojunction nanowires

  • 期刊论文

  • 发表日期：

    2025年4月22日

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  • Sapam Bikesh,
  • Aheibam Dinamani Singh,
  • Biraj Shougaijam,
  • Tanjim Rahman,
  • Trupti Lenka,
  • Hieu P. Nguyen

摘要

SnO2-TiO2 nanowire (NW) was fabricated at room temperature (25 °C) using Glancing Angle Deposition (GLAD) technique for photodetector application. The XRD peak of the sample reveals the formation of amorphous TiO2 and polycrystalline SnO2. FE-SEM image confirms the formation of vertically aligned SnO2-TiO2 heterostructure with porous morphology. The device exhibited a photoresponsivity (𝑅) of 0.14 A/W with a detectivity of 1.48 × 1011 Jones under 405 nm wavelength at -3 V. Moreover, the device exhibits a rise time of 0.13 s and a fall time of 0.52 s. The photo-response characteristics can be attributed to the photoinduced charge transfer in the interface between TiO2 and SnO2 and large surface area of the vertically aligned nanocolumn morphology. These results suggest that SnO2-TiO2 fabricated using GLAD hold significant potential for high performance UV photodetectors.