Research on performance degradation of through-silicon via interconnect structures based on irreversible entropy
摘要
As a key enabling technology for fourth-generation interconnects, Through-silicon via (TSV) has been widely adopted in advanced electronic packaging. However, performance degradation of TSV in service remains a significant challenge in engineering practice. To accurately characterize and effectively evaluate the performance of TSV structures under multi-physics service conditions, a cross-scale analysis method of the TSV performance degradation is proposed based on thermodynamic irreversible entropy production, which can also reveal the structural evolving process from the microscopic viewpoint. First, the electro-thermo-mechanical coupled response of the TSV structure is modeled and analyzed under generalized low-frequency signal excitation. Temperature and stress distributions under multi-physics coupling effects are obtained, while the entropy production process within the structure is simultaneously tracked. Subsequently, based on the theory of thermodynamic theory, a local entropy production model for the TSV structure is developed by incorporating plastic work and heat conduction mechanisms. This model reveals the thermodynamic mechanisms driving performance degradation and damage evolution in TSVs. Finally, a numerical example is provided to validate the effectiveness of the proposed method and model, yielding several important conclusions.