<p>We experimentally demonstrate negative differential resistance, collector current oscillations, and light emission in a transistor-injected quantum cascade structure. Distinct transport regimes are accessed by varying the reverse bias across the base-collector junction while independently controlling emitter injection. The collector current shows pronounced oscillations and alternating high–low levels as the reverse bias changes, indicating quantum transport through the superlattice. Oscillations at a peak frequency of 3.2 MHz occur within high-bias negative differential resistance regions. Spontaneous short-wave infrared (SWIR) emission from the base region is characterized using Fourier transform infrared spectroscopy, revealing a peak wavelength of 1.58 <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\mu \)</EquationSource> </InlineEquation>m. Coupling between the emitted light and superlattice modes is confirmed by SWIR intensity oscillations synchronized with collector current oscillations. Under forward bias of the base-collector junction, the device emits coherent SWIR light at 1.58 <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(\mu \)</EquationSource> </InlineEquation>m, aided by carrier confinement from a quantum impedance matching region. Additionally, spontaneous mid-wave infrared emission is observed from the quantum cascade structure. This three-terminal, transistor-injected platform integrates electronic modulation with tunable optical output, showing promise for a versatile alternative to conventional two-terminal quantum cascade devices that could enable new opportunities in long-wavelength photonics for sensing, communication, and spectroscopy applications.</p>

错误:搜索内容不能为空,请输入英文关键词
错误:关键词超出字数限制,请精简
高级检索

Negative differential resistance, self-oscillations, and light emission in transistor-injected quantum cascade structures

  • Raman Kumar,
  • Robert B. Kaufman,
  • Fu-Chen Hsiao,
  • John M. Dallesasse

摘要

We experimentally demonstrate negative differential resistance, collector current oscillations, and light emission in a transistor-injected quantum cascade structure. Distinct transport regimes are accessed by varying the reverse bias across the base-collector junction while independently controlling emitter injection. The collector current shows pronounced oscillations and alternating high–low levels as the reverse bias changes, indicating quantum transport through the superlattice. Oscillations at a peak frequency of 3.2 MHz occur within high-bias negative differential resistance regions. Spontaneous short-wave infrared (SWIR) emission from the base region is characterized using Fourier transform infrared spectroscopy, revealing a peak wavelength of 1.58 \(\mu \) m. Coupling between the emitted light and superlattice modes is confirmed by SWIR intensity oscillations synchronized with collector current oscillations. Under forward bias of the base-collector junction, the device emits coherent SWIR light at 1.58 \(\mu \) m, aided by carrier confinement from a quantum impedance matching region. Additionally, spontaneous mid-wave infrared emission is observed from the quantum cascade structure. This three-terminal, transistor-injected platform integrates electronic modulation with tunable optical output, showing promise for a versatile alternative to conventional two-terminal quantum cascade devices that could enable new opportunities in long-wavelength photonics for sensing, communication, and spectroscopy applications.