Scholarlink

<p>The structure of a terahertz (THz) laser with a plasmonic waveguide based on an electron-rich GaAs/AlGaAs heterojunction is proposed. Modeling of electromagnetic modes was carried out taking into account the spatial dispersion of permittivity. Based on self-consistent calculations of electron states, taking into account the influence of the spatial charge distribution on the conduction band profile, it is shown that the current–voltage characteristic of the laser has a hysteresis type. The generation of the plasmonic mode occurs in the hysteresis region at frequencies of 1.8–4.1 THz. The gain of the plasmonic mode can reach 10<sup>5</sup>&#xa0;cm<sup>–1</sup> at a temperature of 77&#xa0;K.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Terahertz plasmon intersubband laser based on an electron-enriched GaAs/AlGaAs heterojunction

  • 期刊论文

  • 发表日期：

    2025年6月30日

查看全文
  • A. A. Afonenko,
  • D. V. Ushakov,
  • A. A. Dubinov

摘要

The structure of a terahertz (THz) laser with a plasmonic waveguide based on an electron-rich GaAs/AlGaAs heterojunction is proposed. Modeling of electromagnetic modes was carried out taking into account the spatial dispersion of permittivity. Based on self-consistent calculations of electron states, taking into account the influence of the spatial charge distribution on the conduction band profile, it is shown that the current–voltage characteristic of the laser has a hysteresis type. The generation of the plasmonic mode occurs in the hysteresis region at frequencies of 1.8–4.1 THz. The gain of the plasmonic mode can reach 105 cm–1 at a temperature of 77 K.