<p>We theoretically investigated the effect of non-uniform distribution of acceptor-doped atoms on high-order harmonic generation (HHG) in doped semiconductors, employing two models related to actual doped semiconductors: linear and Gaussian distributions. Compared with uniformly doped semiconductors, we found that non-uniformly doped semiconductors with impurities localized on one side of the atomic chain exhibit enhanced below-band-gap harmonics and suppressed the second plateau of harmonics. Additionally, we observed distinct even harmonics in the low-energy region of HHG from non-uniformly doped semiconductors, as non-uniform doping breaks the translational symmetry of the crystal lattice. Moreover, by analyzing the energy band structure, the time-dependent population imaging (TDPI) and time-frequency analysis, we have illustrated the reasons for the harmonic differences between non-uniformly and uniformly doped semiconductors.</p>