Scholarlink

<p>This work compares Silicon and novel Si1-xGex/InGaAs heterostructure junctionless TFETs (HJLTFET) under VDS = 1.5&#xa0;V to assess high-frequency performance, linearity, and switching behavior across gate bias using only the provided device characteristics and band diagrams. The evaluation integrates capacitances (Cgs, Cgd), transfer and subthreshold behavior, nonlinear transconductance (gm2, gm3), frequency metrics (fT, fmax, GBWP, GTFP), efficiency indicators (TGF = gm/IDS, TFP), intrinsic gain and delay, and RF linearity figures of merit (IIP3, VIP2/VIP3, IMD3, 1-dB compression point). Across bias, the Si1-xGex/InGaAs device exhibits higher fT/fmax and bandwidth-related measures than Silicon at the same supply, indicating stronger high-frequency potential under modest voltage. Linearity plots show higher input intercept points and reduced-magnitude IMD3 over a broad bias range, evidencing improved large-signal fidelity for the heterostructure device. Nonlinear transconductance trends align with these outcomes, identifying bias regions where distortion is minimized as RF figures peak. Device-level metrics further show higher intrinsic gain with lower intrinsic delay, alongside favorable TGF and TFP that reinforce efficiency and switching speed. Transfer characteristics reflect lower subthreshold swing and higher ION/IOFF for the heterostructure device, supported by band-diagram evidence of a more favorable tunneling pathway at relevant biases. These results support Si1-xGex/InGaAs HJLTFETs as promising candidates for low-power, high-frequency analog/RF applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Si1-xGex/InGaAs HJLTFET for low-power RF: concurrent improvements in speed, bandwidth, linearity, and switching delay

  • 期刊论文

  • 发表日期：

    2026年8月5日

查看全文
  • Kaushal Kumar,
  • Challa Harshavardhan Reddy,
  • Ajay Kumar,
  • Vinay Kumar,
  • Aditya Jain,
  • Neha Gupta,
  • Nitin Arora,
  • Subhash Chander Sharma

摘要

This work compares Silicon and novel Si1-xGex/InGaAs heterostructure junctionless TFETs (HJLTFET) under VDS = 1.5 V to assess high-frequency performance, linearity, and switching behavior across gate bias using only the provided device characteristics and band diagrams. The evaluation integrates capacitances (Cgs, Cgd), transfer and subthreshold behavior, nonlinear transconductance (gm2, gm3), frequency metrics (fT, fmax, GBWP, GTFP), efficiency indicators (TGF = gm/IDS, TFP), intrinsic gain and delay, and RF linearity figures of merit (IIP3, VIP2/VIP3, IMD3, 1-dB compression point). Across bias, the Si1-xGex/InGaAs device exhibits higher fT/fmax and bandwidth-related measures than Silicon at the same supply, indicating stronger high-frequency potential under modest voltage. Linearity plots show higher input intercept points and reduced-magnitude IMD3 over a broad bias range, evidencing improved large-signal fidelity for the heterostructure device. Nonlinear transconductance trends align with these outcomes, identifying bias regions where distortion is minimized as RF figures peak. Device-level metrics further show higher intrinsic gain with lower intrinsic delay, alongside favorable TGF and TFP that reinforce efficiency and switching speed. Transfer characteristics reflect lower subthreshold swing and higher ION/IOFF for the heterostructure device, supported by band-diagram evidence of a more favorable tunneling pathway at relevant biases. These results support Si1-xGex/InGaAs HJLTFETs as promising candidates for low-power, high-frequency analog/RF applications.