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<p>InSe polycrystalline samples were prepared by melt quenching under different cooling rates. The XRD patterns confirmed the hexagonal crystal structure of the InSe ingots. FESEM analysis shows the different grain structures for the samples crystallized at various cooling rates. The electrical resistivity of InSe increased with cooling rates, due to variation in the grain structure. The Seebeck coefficient of InSe samples increased with respect to cooling rates owing to increase in the electrical resistivity. A high-power factor of 189 µW/m K<sup>2</sup> was achieved for ice water quenched (IWQ InSe) sample at 623&#xa0;K compared to slow cooled (SC InSe) sample (108 µW/m K<sup>2</sup> at 623&#xa0;K). The Thermal conductivity of InSe was decreased up to 51% with increasing cooling rate due to phonon scattering at grain boundaries. As a result, high zT (0.2) was achieved at 623&#xa0;K for IWQ InSe sample compared to SC InSe sample (0.06 at 623&#xa0;K).</p>

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Tailoring grain structure and thermal transport in rapidly crystallized indium selenide to improve thermoelectric performance

  • 期刊论文

  • 发表日期：

    2026年7月29日

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  • M. Sivakumar,
  • J. Prasath,
  • R. Annie Victoria Rose,
  • S. Senthamizh Raja,
  • J. Mani,
  • A. Sampathu,
  • Lu-Chung Chuang,
  • Kozo Fujiwara,
  • Ramasamy Jayavel,
  • M. Arivanandhan

摘要

InSe polycrystalline samples were prepared by melt quenching under different cooling rates. The XRD patterns confirmed the hexagonal crystal structure of the InSe ingots. FESEM analysis shows the different grain structures for the samples crystallized at various cooling rates. The electrical resistivity of InSe increased with cooling rates, due to variation in the grain structure. The Seebeck coefficient of InSe samples increased with respect to cooling rates owing to increase in the electrical resistivity. A high-power factor of 189 µW/m K2 was achieved for ice water quenched (IWQ InSe) sample at 623 K compared to slow cooled (SC InSe) sample (108 µW/m K2 at 623 K). The Thermal conductivity of InSe was decreased up to 51% with increasing cooling rate due to phonon scattering at grain boundaries. As a result, high zT (0.2) was achieved at 623 K for IWQ InSe sample compared to SC InSe sample (0.06 at 623 K).