Scholarlink

<p>Picosecond laser processing at metal–semiconductor interfaces can drive unique light–matter interaction regimes, yet the self-organized formation of well-defined nanochannel arrays in wide-bandgap semiconductors has not been demonstrated. This work demonstrates the spontaneous formation of periodic nanochannels in silicon carbide (SiC) induced by scanning 1&#xa0;ps laser pulses across a Ni/SiC interface. Cross-sectional transmission electron microscopy of focused-ion-beam-prepared specimens reveals an array of approximately 30&#xa0;nm-wide cavities located about 75&#xa0;nm below the interface and periodically spaced at around 125&#xa0;nm along the laser scan direction. Tilted imaging confirms that these cavities form continuous cylindrical channels traversing the ~120&#xa0;nm-thick specimen. STEM–EDS elemental mapping shows silicon depletion inside the channels and local silicon accumulation around them, indicating diffusion-driven void formation coupled with laser-induced strain fields. These observations identify a previously unexplored regime of picosecond laser interaction at metal–SiC interfaces, in which localized heating, stress and mass transport cooperate to generate ordered nanochannel arrays embedded in a wide-bandgap semiconductor.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Self-organized periodic nanochannel arrays in silicon carbide induced by picosecond laser processing at metal–semiconductor interfaces

  • 期刊论文

  • 发表日期：

    2026年8月4日

查看全文
  • Naoya Suto,
  • Kaito Fukuda,
  • Hiroto Seki,
  • Takuya Kawakami,
  • Keisuke Takabayashi,
  • Tsubasa Endo,
  • Yuusuke Takashima,
  • Kentaro Nagamatsu,
  • Yoshiki Naoi,
  • Makoto Yamaguchi,
  • Tatsuya Okada,
  • Yohei Kobayashi,
  • Takuro Tomita

摘要

Picosecond laser processing at metal–semiconductor interfaces can drive unique light–matter interaction regimes, yet the self-organized formation of well-defined nanochannel arrays in wide-bandgap semiconductors has not been demonstrated. This work demonstrates the spontaneous formation of periodic nanochannels in silicon carbide (SiC) induced by scanning 1 ps laser pulses across a Ni/SiC interface. Cross-sectional transmission electron microscopy of focused-ion-beam-prepared specimens reveals an array of approximately 30 nm-wide cavities located about 75 nm below the interface and periodically spaced at around 125 nm along the laser scan direction. Tilted imaging confirms that these cavities form continuous cylindrical channels traversing the ~120 nm-thick specimen. STEM–EDS elemental mapping shows silicon depletion inside the channels and local silicon accumulation around them, indicating diffusion-driven void formation coupled with laser-induced strain fields. These observations identify a previously unexplored regime of picosecond laser interaction at metal–SiC interfaces, in which localized heating, stress and mass transport cooperate to generate ordered nanochannel arrays embedded in a wide-bandgap semiconductor.