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<p>In the present study, three different diodes with an Au/(%x Gr: PVA)/n-Si Metal-Polymer-Semiconductor (MPS) structure were obtained by electrospin coating using a PVA-based interface layer with different graphene doping percentages. The variation of fundamental electrical parameters such as reverse saturation current (<i>I</i><sub><i>0</i></sub>), zero-bias barrier height (<i>Ф</i><sub><i>B0</i></sub>), ideality factor (<i>n</i>), series and shunt resistances (<i>R</i><sub><i>s</i></sub> and <i>R</i><sub><i>sh</i></sub>), and rectification ratio (<i>RR</i>) with the doping ratio was investigated in the fabricated Schottky diodes’ current-voltage (I-V) graphs. Interface states (<i>N</i><sub><i>ss</i></sub>)’ energy distribution (<i>E</i><sub><i>c</i></sub>-<i>E</i><sub><i>ss</i></sub>) was calculated by considering the voltage-dependent barrier height (<i>Ф</i><sub><i>e</i></sub>(<i>V</i>)) and ideality factor (<i>n</i>(<i>V</i>)) parameters obtained from the <i>I</i>‒<i>V</i> data under direct bias. Furthermore, ln(<i>I</i>)–<i>ln</i>(<i>V</i>) graphs were plotted to reveal the possible current conduction mechanism of the obtained structures. It was found that the current conduction mechanism is predominantly governed by a trap charge-limited current (TCLC) mechanism in the medium and high forward voltage region. According to the experimental findings, the results indicate that the electrical parameters are a strong function of the nanomaterials doping ratio. A comparative analysis of the electrical parameters of MPS structures at different graphene doping ratios was performed; it was determined that the Schottky diode with an Au/(3% Gr: PVA)/n-Si structure exhibited the best performance in terms of electrical parameters. In other words, the fact that the produced Au/(3% Gr: PVA)/n-Si structure shows a decrease in <i>n</i> and <i>N</i><sub><i>ss</i></sub> values compared to other structures, while exhibiting a rise in <i>Φ</i><sub><i>B0</i></sub>, <i>RR</i>, and <i>R</i><sub><i>sh</i></sub> values, indicates a significant improvement in device performance. It was concluded that closer-to-ideal Schottky diode characteristics can be obtained by varying the doping ratio in the interface material of the MPS/MIS structure.</p>

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Preparation of graphene doped PVA/n-Si (MPS) Schottky diodes at different ratios and investigation of their electrical properties

  • 期刊论文

  • 发表日期：

    2026年7月21日

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  • Özlem Abay,
  • Ayten Seçkin,
  • Sema Bilge Ocak,
  • Uğur Gökmen

摘要

In the present study, three different diodes with an Au/(%x Gr: PVA)/n-Si Metal-Polymer-Semiconductor (MPS) structure were obtained by electrospin coating using a PVA-based interface layer with different graphene doping percentages. The variation of fundamental electrical parameters such as reverse saturation current (I0), zero-bias barrier height (ФB0), ideality factor (n), series and shunt resistances (Rs and Rsh), and rectification ratio (RR) with the doping ratio was investigated in the fabricated Schottky diodes’ current-voltage (I-V) graphs. Interface states (Nss)’ energy distribution (Ec-Ess) was calculated by considering the voltage-dependent barrier height (Фe(V)) and ideality factor (n(V)) parameters obtained from the I‒V data under direct bias. Furthermore, ln(I)–ln(V) graphs were plotted to reveal the possible current conduction mechanism of the obtained structures. It was found that the current conduction mechanism is predominantly governed by a trap charge-limited current (TCLC) mechanism in the medium and high forward voltage region. According to the experimental findings, the results indicate that the electrical parameters are a strong function of the nanomaterials doping ratio. A comparative analysis of the electrical parameters of MPS structures at different graphene doping ratios was performed; it was determined that the Schottky diode with an Au/(3% Gr: PVA)/n-Si structure exhibited the best performance in terms of electrical parameters. In other words, the fact that the produced Au/(3% Gr: PVA)/n-Si structure shows a decrease in n and Nss values compared to other structures, while exhibiting a rise in ΦB0, RR, and Rsh values, indicates a significant improvement in device performance. It was concluded that closer-to-ideal Schottky diode characteristics can be obtained by varying the doping ratio in the interface material of the MPS/MIS structure.