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<p>It is difficult to grow Mg-doped GaN epilayer (Mg:GaN) with high hole concentration (~ 1E18 cm⁻³) to fabricate p-type contact on laser diodes and light emitting devices due to high ionization energy (~ 200 meV) along with issues like passivation, compensation, segregation etc. High temperature post-growth activation of Mg may generate holes but adversely affect the material and electrical characteristics due to creation of donor-like nitrogen vacancy defects. Post-growth rapid thermal annealing (RTA) has been optimized for activation of Mg dopants in metal organic vapor phase epitaxy (MOVPE) grown Mg:GaN epilayers to enhance hole concentration with minimal deterioration in material characteristics. Effect of RTA temperature (800–900&#xa0;°C) on the crystalline quality, morphology, optical quality and Mg distribution in GaN has been studied systematically using high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), photoluminescence (PL), and secondary ion mass spectroscopy (SIMS), respectively. Electrochemical capacitance voltage (ECV) measurement has been presented as a convenient and reliable technique to depth profile the hole concentration and ascertain extent of activation. Activation of more than 6% has been achieved at 850&#xa0;°C with reasonable crystalline quality and step-flow morphology with minimal surface roughness. ECV measurements have confirmed a uniform hole concentration of more than 1E18 cm⁻³ up to a depth of 490&#xa0;nm with transition of carriers to n-type close to the unintentionally doped (uid) GaN layer. Sheet resistivity as low as 2E-2 Ω/□ has been measured in the sample by transmission line method (TLM). The outcome of the study has immense significance for vertical devices where deep p-doping is needed for efficient current injection.</p>

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Influence on electro-physical properties of Mg-doped GaN by rapid thermal annealing

  • 期刊论文

  • 发表日期：

    2026年8月5日

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  • Mansi,
  • Jaya Lohani,
  • Brajesh S. Yadav,
  • Kamal Lohani,
  • O. P. Thakur,
  • D. S. Rawal,
  • Udaibir Singh

摘要

It is difficult to grow Mg-doped GaN epilayer (Mg:GaN) with high hole concentration (~ 1E18 cm⁻³) to fabricate p-type contact on laser diodes and light emitting devices due to high ionization energy (~ 200 meV) along with issues like passivation, compensation, segregation etc. High temperature post-growth activation of Mg may generate holes but adversely affect the material and electrical characteristics due to creation of donor-like nitrogen vacancy defects. Post-growth rapid thermal annealing (RTA) has been optimized for activation of Mg dopants in metal organic vapor phase epitaxy (MOVPE) grown Mg:GaN epilayers to enhance hole concentration with minimal deterioration in material characteristics. Effect of RTA temperature (800–900 °C) on the crystalline quality, morphology, optical quality and Mg distribution in GaN has been studied systematically using high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), photoluminescence (PL), and secondary ion mass spectroscopy (SIMS), respectively. Electrochemical capacitance voltage (ECV) measurement has been presented as a convenient and reliable technique to depth profile the hole concentration and ascertain extent of activation. Activation of more than 6% has been achieved at 850 °C with reasonable crystalline quality and step-flow morphology with minimal surface roughness. ECV measurements have confirmed a uniform hole concentration of more than 1E18 cm⁻³ up to a depth of 490 nm with transition of carriers to n-type close to the unintentionally doped (uid) GaN layer. Sheet resistivity as low as 2E-2 Ω/□ has been measured in the sample by transmission line method (TLM). The outcome of the study has immense significance for vertical devices where deep p-doping is needed for efficient current injection.