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<p>The resistive switching behavior and electrical conduction mechanisms of Al/SrBi₄Ti₄O₁₅ (SBT)/TiN/Si resistive random-access memory (RRAM) devices were investigated under different rapid thermal annealing (RTA) temperatures and photo-illumination conditions. Structural analysis revealed that SBT thin films annealed at 500&#xa0;°C exhibited improved crystallinity, dense grain distribution, and reduced defect density. The optimized device achieved an On/Off resistance ratio of approximately 10<sup>1</sup>–10<sup>2</sup> with leakage currents as low as 10⁻<sup>5</sup> A under photo-illuminated conditions. In addition, stable bipolar switching endurance exceeding 100 cycles and reliable retention performance over 10<sup>4</sup> s were obtained. Electrical conduction analysis indicated that the high-resistance state was dominated by Ohmic and Poole–Frenkel conduction, while the low-resistance state exhibited mixed Ohmic and hopping conduction behavior. Temperature-dependent measurements further confirmed oxygen-vacancy-assisted hopping transport with activation energies ranging from 66 to 128&#xa0;meV. The results demonstrate that optimized RTA treatment at 500&#xa0;°C significantly enhances the electrical stability and non-volatile memory performance of SBT-based RRAM devices.</p>

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Influence of rapid thermal annealing and illumination on conduction mechanisms and resistive switching behavior of sol–gel-derived SrBi₄Ti₄O₁₅ RRAM devices

  • 期刊论文

  • 发表日期：

    2026年7月21日

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  • Wen-Lung Lee,
  • Ming-Cheng Kao,
  • Kai-Huang Chen,
  • Shen-Feng Lin

摘要

The resistive switching behavior and electrical conduction mechanisms of Al/SrBi₄Ti₄O₁₅ (SBT)/TiN/Si resistive random-access memory (RRAM) devices were investigated under different rapid thermal annealing (RTA) temperatures and photo-illumination conditions. Structural analysis revealed that SBT thin films annealed at 500 °C exhibited improved crystallinity, dense grain distribution, and reduced defect density. The optimized device achieved an On/Off resistance ratio of approximately 101–102 with leakage currents as low as 10⁻5 A under photo-illuminated conditions. In addition, stable bipolar switching endurance exceeding 100 cycles and reliable retention performance over 104 s were obtained. Electrical conduction analysis indicated that the high-resistance state was dominated by Ohmic and Poole–Frenkel conduction, while the low-resistance state exhibited mixed Ohmic and hopping conduction behavior. Temperature-dependent measurements further confirmed oxygen-vacancy-assisted hopping transport with activation energies ranging from 66 to 128 meV. The results demonstrate that optimized RTA treatment at 500 °C significantly enhances the electrical stability and non-volatile memory performance of SBT-based RRAM devices.