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<p>Solution-processed zirconium oxide (ZrO<sub>2</sub>) thin films are attractive as low-cost high-k dielectrics for thin-film transistors and flexible electronics. In this work, ~ 35&#xa0;nm sol–gel ZrO<sub>2</sub> films were synthesized from zirconium n-propoxide via multi-layer spin coating on Si and annealed at 400–600&#xa0;°C in either 100% O<sub>2</sub> or 25% O<sub>2</sub> / 75% N<sub>2</sub> atmospheres. Comprehensive electrical characterization revealed that pure O<sub>2</sub> annealing suppressed oxygen vacancies more effectively than 25% O<sub>2</sub>, resulting in significantly reduced leakage current densities (~ 10<sup>− 6</sup> A/cm<sup>2</sup> at + 2.0&#xa0;V for 600&#xa0;°C annealing temperature). All samples maintained high dielectric constants above 22, matching dense ZrO<sub>2</sub> produced by vacuum-based methods. XPS confirmed an increase in Zr–O lattice bonding with temperature, while electrical analysis showed Schottky emission as the dominant leakage mechanism. These findings demonstrate that oxygen-rich annealing provides a simple yet effective route to enhance the reliability of sol-gel derived ZrO<sub>2</sub> gate dielectrics, offering insights on defects for optimizing high-k materials in next-generation electronic devices.</p>

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Investigation on the effect of oxygen-rich annealing on electrical and material properties of sol-gel derived zirconium oxide gate dielectric thin films

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月13日

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  • Tahsinul Huq,
  • Joon Huang Chuah,
  • Mohd Faizul Mohd Sabri,
  • Chia Ching Kee,
  • Chee Zing Tok,
  • Jia Ren Tan,
  • Shuye Zhang,
  • Peisan E Sharel,
  • Prastika Krisma Jiwanti,
  • Yew Hoong Wong

摘要

Solution-processed zirconium oxide (ZrO2) thin films are attractive as low-cost high-k dielectrics for thin-film transistors and flexible electronics. In this work, ~ 35 nm sol–gel ZrO2 films were synthesized from zirconium n-propoxide via multi-layer spin coating on Si and annealed at 400–600 °C in either 100% O2 or 25% O2 / 75% N2 atmospheres. Comprehensive electrical characterization revealed that pure O2 annealing suppressed oxygen vacancies more effectively than 25% O2, resulting in significantly reduced leakage current densities (~ 10− 6 A/cm2 at + 2.0 V for 600 °C annealing temperature). All samples maintained high dielectric constants above 22, matching dense ZrO2 produced by vacuum-based methods. XPS confirmed an increase in Zr–O lattice bonding with temperature, while electrical analysis showed Schottky emission as the dominant leakage mechanism. These findings demonstrate that oxygen-rich annealing provides a simple yet effective route to enhance the reliability of sol-gel derived ZrO2 gate dielectrics, offering insights on defects for optimizing high-k materials in next-generation electronic devices.