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<p>The surface potential of P-type Gallium Nitride (GaN) is modeled using a Metal-Oxide-Semiconductor (MOS) based field plate. Using this model, the charge collection efficiency of a PN junction GaN betavoltaic device was simulated. By including the effects of incomplete ionization together with the surface potential, the P-layer’s thickness design can be optimized. The model indicates for P-type doping of 1 × 10<sup>19</sup> cm<sup>-3</sup>, 87% of the zero-surface barrier collection efficiency can be obtained. However, if only 1 × 10<sup>18</sup> cm<sup>-3</sup> doping can be achieved, the collection efficiency will be only 57% of the maximum zero-surface barrier collection. As a result, heavily doped, ultra-thin P-layers enable improved carrier collection and higher efficiency under elevated surface potential conditions.</p>

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Modeling the effects of surface potential on gallium nitride betavoltaic cell collection efficiency

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月6日

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  • Monté L. Hendrix,
  • Kishak Cinfwat,
  • Michael G. Spencer

摘要

The surface potential of P-type Gallium Nitride (GaN) is modeled using a Metal-Oxide-Semiconductor (MOS) based field plate. Using this model, the charge collection efficiency of a PN junction GaN betavoltaic device was simulated. By including the effects of incomplete ionization together with the surface potential, the P-layer’s thickness design can be optimized. The model indicates for P-type doping of 1 × 1019 cm-3, 87% of the zero-surface barrier collection efficiency can be obtained. However, if only 1 × 1018 cm-3 doping can be achieved, the collection efficiency will be only 57% of the maximum zero-surface barrier collection. As a result, heavily doped, ultra-thin P-layers enable improved carrier collection and higher efficiency under elevated surface potential conditions.