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<p>In this study, Fe₃O₄ magnetic nanoparticles were synthesized by chemical co-precipitation and applied as an interlayer onto p-type Si substrates using sputtering to produce Ag/Fe₃O₄/p-Si Schottky diode structures. The structural, morphological, and optical properties of the synthesized Fe₃O₄ nanoparticles were investigated using X-ray diffraction (XRD), scanning electron microscopy–energy dispersive X-ray spectroscopy (SEM–EDX), and UV–Vis spectroscopy, respectively. XRD analyses showed the formation of a single-phase cubic inverse spinel Fe₃O₄ structure with an average crystallite size of approximately 10.8&#xa0;nm. SEM–EDX results confirmed the production of agglomerated nanoparticles with a granular morphology and high chemical purity. UV–Vis measurements revealed that Fe₃O₄ nanoparticles exhibited a broad absorption band in the 330–450&#xa0;nm wavelength range, and the optical band gap was approximately 2.03&#xa0;eV using the Tauc method.</p><p>The electrical and photodetection properties of the fabricated Ag/Fe₃O₄/p-Si Schottky diodes were evaluated using current-voltage (I–V) measurements performed under dark and illuminated conditions. The addition of the Fe₃O₄ interlayer resulted in a decrease in forward current values, a reduction in the ideality factor, and an increase in Schottky barrier height; this indicates improved metal/semiconductor interface quality and reduced barrier inhomogeneity. Diode parameters were calculated using the Cheung and Norde methods, and the obtained results were found to be consistent. Furthermore, interface density analyses revealed that the Fe₃O₄ interlayer reduced interface defects by approximately two orders of magnitude. Measurements under illumination showed that the diode exhibited low dark current and high photoresponse; a maximum response of 66.7&#xa0;mA/W, an external quantum efficiency of 11.8%, and specific detectivity values of the order of 10¹⁰ Jones were obtained. These results demonstrate that the Fe₃O₄ interlayer offers an effective interface engineering approach in p-Si-based Schottky diodes and have promising potential for photodetector and optoelectronic applications.</p>

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Influence of Fe₃O₄ interlayer on interface and photodetection properties of Ag/p-Si Schottky diodes

  • 期刊论文

  • 发表日期：

    2026年7月30日

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  • Melek Güner,
  • Emine Erdem,
  • Ömer Güllü,
  • Adem Tataroğlu

摘要

In this study, Fe₃O₄ magnetic nanoparticles were synthesized by chemical co-precipitation and applied as an interlayer onto p-type Si substrates using sputtering to produce Ag/Fe₃O₄/p-Si Schottky diode structures. The structural, morphological, and optical properties of the synthesized Fe₃O₄ nanoparticles were investigated using X-ray diffraction (XRD), scanning electron microscopy–energy dispersive X-ray spectroscopy (SEM–EDX), and UV–Vis spectroscopy, respectively. XRD analyses showed the formation of a single-phase cubic inverse spinel Fe₃O₄ structure with an average crystallite size of approximately 10.8 nm. SEM–EDX results confirmed the production of agglomerated nanoparticles with a granular morphology and high chemical purity. UV–Vis measurements revealed that Fe₃O₄ nanoparticles exhibited a broad absorption band in the 330–450 nm wavelength range, and the optical band gap was approximately 2.03 eV using the Tauc method.

The electrical and photodetection properties of the fabricated Ag/Fe₃O₄/p-Si Schottky diodes were evaluated using current-voltage (I–V) measurements performed under dark and illuminated conditions. The addition of the Fe₃O₄ interlayer resulted in a decrease in forward current values, a reduction in the ideality factor, and an increase in Schottky barrier height; this indicates improved metal/semiconductor interface quality and reduced barrier inhomogeneity. Diode parameters were calculated using the Cheung and Norde methods, and the obtained results were found to be consistent. Furthermore, interface density analyses revealed that the Fe₃O₄ interlayer reduced interface defects by approximately two orders of magnitude. Measurements under illumination showed that the diode exhibited low dark current and high photoresponse; a maximum response of 66.7 mA/W, an external quantum efficiency of 11.8%, and specific detectivity values of the order of 10¹⁰ Jones were obtained. These results demonstrate that the Fe₃O₄ interlayer offers an effective interface engineering approach in p-Si-based Schottky diodes and have promising potential for photodetector and optoelectronic applications.