<p>Zinc phosphide (Zn<sub>3</sub>P<sub>2</sub>) thin films have been deposited by thermal evaporation onto ITO (Zn<sub>3</sub>P<sub>2</sub>/ITO), glass (Zn<sub>3</sub>P<sub>2</sub>/glass), and silicon (Zn<sub>3</sub>P<sub>2</sub>/Si) substrates. Room-temperature (RT) conditions were used for all thin-film deposition procedures. Structural, morphological, chemical, optical, and electrical properties were investigated. Characterization techniques such as XRD, SEM, EDS, UV-Vis-NIR spectroscopy, and four-probe (I-V) were used to analyse the prepared thin films. The XRD investigation revealed that all the substrates were amorphous. Scanning electron microscopy images demonstrated that the substrate affects the surface form of the Zn₃P₂ thin layer. The primary constituent elements Zn and P in Zn₃P₂ thin films deposited on various substrates were verified by EDS analysis. According to FTIR spectra, transmittance varies with substrate and exhibits distinctive vibrational bands in the 750–900&#xa0;cm⁻¹ and ~ 1988–2102&#xa0;cm⁻¹ areas. In Zn₃P₂ thin films, substrate-dependent optical absorption and transmission characteristics were discovered using UV-Vis-NIR spectroscopy. The optical band gaps of glass and ITO substrate are 1.402&#xa0;eV and 1.534&#xa0;eV, respectively. I-V studies reveal a notable substrate dependency, with increased linear conductivity on ITO, nonlinear behaviour on Si, and little conduction on glass.</p>

错误:搜索内容不能为空,请输入英文关键词
错误:关键词超出字数限制,请精简
高级检索

Zn3P2 thin films deposited on glass, ITO, and silicon substrates: structural, optical, and electrical properties

  • Nakka Praveenkumar,
  • M. Bujji Babu,
  • K. V. Madhuri,
  • Nasina Madhusudhana Rao,
  • Mathew K. Moodley

摘要

Zinc phosphide (Zn3P2) thin films have been deposited by thermal evaporation onto ITO (Zn3P2/ITO), glass (Zn3P2/glass), and silicon (Zn3P2/Si) substrates. Room-temperature (RT) conditions were used for all thin-film deposition procedures. Structural, morphological, chemical, optical, and electrical properties were investigated. Characterization techniques such as XRD, SEM, EDS, UV-Vis-NIR spectroscopy, and four-probe (I-V) were used to analyse the prepared thin films. The XRD investigation revealed that all the substrates were amorphous. Scanning electron microscopy images demonstrated that the substrate affects the surface form of the Zn₃P₂ thin layer. The primary constituent elements Zn and P in Zn₃P₂ thin films deposited on various substrates were verified by EDS analysis. According to FTIR spectra, transmittance varies with substrate and exhibits distinctive vibrational bands in the 750–900 cm⁻¹ and ~ 1988–2102 cm⁻¹ areas. In Zn₃P₂ thin films, substrate-dependent optical absorption and transmission characteristics were discovered using UV-Vis-NIR spectroscopy. The optical band gaps of glass and ITO substrate are 1.402 eV and 1.534 eV, respectively. I-V studies reveal a notable substrate dependency, with increased linear conductivity on ITO, nonlinear behaviour on Si, and little conduction on glass.