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<p>This study investigates the correlation between RF magnetron sputtering power and the luminescent decay characteristics of ZnO thin films. By adjusting deposition power from 80 to 160&#xa0;W, systematic variations in film morphology and defect density were observed. SEM analysis indicated that higher sputtering powers generally enhanced crystallinity and grain size, while FTIR spectroscopy confirmed the formation of the characteristic Zn-O lattice. Photoluminescence (PL) and time-resolved PL measurements were employed to assess the impact of these structural changes on optical performance. A shift in the emission profile occurred at 140&#xa0;W, where a reduction in the 500&#xa0;nm deep-level emission coincided with an acceleration in UV luminescence decay kinetics. The films deposited at this power reached a decay time of 160 ps at room temperature. These results suggest that optimizing discharge energy provides a pathway for modulating excitonic recombination and trapping states, contributing to the development of ZnO-based materials for applications requiring specific timing characteristics, such as high-speed UV photodetectors.</p>

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Modulating the optical properties and defect states for ultrafast UV luminescence of ZnO films by RF sputtering method

  • 期刊论文

  • 发表日期：

    2026年6月23日

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  • Bui Thi Thu Phuong,
  • Nguyen Duc Thang,
  • Nguyen Thi Minh Hien,
  • Nguyen Ngoc Anh,
  • Thanh Huy Nguyen,
  • Thi Kim Oanh Vu

摘要

This study investigates the correlation between RF magnetron sputtering power and the luminescent decay characteristics of ZnO thin films. By adjusting deposition power from 80 to 160 W, systematic variations in film morphology and defect density were observed. SEM analysis indicated that higher sputtering powers generally enhanced crystallinity and grain size, while FTIR spectroscopy confirmed the formation of the characteristic Zn-O lattice. Photoluminescence (PL) and time-resolved PL measurements were employed to assess the impact of these structural changes on optical performance. A shift in the emission profile occurred at 140 W, where a reduction in the 500 nm deep-level emission coincided with an acceleration in UV luminescence decay kinetics. The films deposited at this power reached a decay time of 160 ps at room temperature. These results suggest that optimizing discharge energy provides a pathway for modulating excitonic recombination and trapping states, contributing to the development of ZnO-based materials for applications requiring specific timing characteristics, such as high-speed UV photodetectors.