<p>Based on the principle of Michelson interference, this paper employs nanosecond laser interference technology to controllably fabricate periodic grating structures on monocrystalline silicon surfaces. By precisely adjusting laser energy density, grating period, pulse number, and repetition frequency, it systematically investigates the influence of laser process parameters on the morphological characteristics of surface gratings on monocrystalline silicon, and elucidates the physical mechanisms involving the synergistic effects of heat conduction, heat-affected zone coupling, and plasma shielding. At low laser energy densities, thermal diffusion dominates; at high energy densities, plasma suppression inhibits the lateral expansion of the molten region. This paper clarifies the synergistic regulation mechanism between grating period and energy density: energy density primarily governs the transition of etching modes, while grating period influences the uniformity of fringe width through optical interference distribution and thermal diffusion range. Additionally, stepwise grating width growth due to heat accumulation under pulse bursts is discovered. This study provides a process basis for the controllable fabrication of large-area, high-precision monocrystalline silicon grating structures for optoelectronic devices.</p>

错误:搜索内容不能为空,请输入英文关键词
错误:关键词超出字数限制,请精简
高级检索

Grating structure control of silicon based on laser interference etching

  • Ming Guo,
  • Yong-Xiang Zhang,
  • Nan Li,
  • Feng Yang,
  • Wen-Ying Zhang,
  • Zhi-Xin Sun

摘要

Based on the principle of Michelson interference, this paper employs nanosecond laser interference technology to controllably fabricate periodic grating structures on monocrystalline silicon surfaces. By precisely adjusting laser energy density, grating period, pulse number, and repetition frequency, it systematically investigates the influence of laser process parameters on the morphological characteristics of surface gratings on monocrystalline silicon, and elucidates the physical mechanisms involving the synergistic effects of heat conduction, heat-affected zone coupling, and plasma shielding. At low laser energy densities, thermal diffusion dominates; at high energy densities, plasma suppression inhibits the lateral expansion of the molten region. This paper clarifies the synergistic regulation mechanism between grating period and energy density: energy density primarily governs the transition of etching modes, while grating period influences the uniformity of fringe width through optical interference distribution and thermal diffusion range. Additionally, stepwise grating width growth due to heat accumulation under pulse bursts is discovered. This study provides a process basis for the controllable fabrication of large-area, high-precision monocrystalline silicon grating structures for optoelectronic devices.