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<p>The dielectric response and electrical transport characteristics of an Au/NAMA/n-Si/In MIS-type diode structure were investigated in the frequency range of 10&#xa0;kHz–1&#xa0;MHz and voltage range of − 2&#xa0;V to + 2&#xa0;V. The NAMA organic interlayer was deposited onto the n-Si substrate by the spin-coating technique. Frequency-dependent capacitance and conductance measurements were used to determine the dielectric permittivity (<i>ε</i>′, <i>ε</i>″), loss tangent (tan<i>δ</i>), electric modulus (<i>M′</i>, <i>M</i>″), and AC conductivity (<i>σ</i><sub>ac</sub>) parameters of the fabricated structure. The obtained results reveal a strong frequency dispersion behavior associated with interfacial polarization and interface-related charge effects. The <i>ε</i>′ values decrease with increasing frequency, while <i>ε</i>″ and tanδ exhibit relatively high values in the low-frequency region due to dielectric loss mechanisms. Electric modulus analysis indicates the presence of relaxation processes and non-Debye type behavior within the structure. In addition, AC conductivity increases with frequency and reaches approximately 6⋅10<sup>− 5</sup> S/cm at 1&#xa0;MHz. The results demonstrate that the NAMA interlayer significantly modifies the dielectric and electrical characteristics of the MIS structure and may provide potential advantages for frequency-dependent semiconductor device applications.</p>

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Frequency and voltage-dependent dielectric, electric modulus, and AC conductivity analysis of Au/NAMA/n-Si MIS diode structures

  • 期刊论文

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  • 发表日期：

    2026年6月15日

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  • Naki Kaya

摘要

The dielectric response and electrical transport characteristics of an Au/NAMA/n-Si/In MIS-type diode structure were investigated in the frequency range of 10 kHz–1 MHz and voltage range of − 2 V to + 2 V. The NAMA organic interlayer was deposited onto the n-Si substrate by the spin-coating technique. Frequency-dependent capacitance and conductance measurements were used to determine the dielectric permittivity (ε′, ε″), loss tangent (tanδ), electric modulus (M′, M″), and AC conductivity (σac) parameters of the fabricated structure. The obtained results reveal a strong frequency dispersion behavior associated with interfacial polarization and interface-related charge effects. The ε′ values decrease with increasing frequency, while ε″ and tanδ exhibit relatively high values in the low-frequency region due to dielectric loss mechanisms. Electric modulus analysis indicates the presence of relaxation processes and non-Debye type behavior within the structure. In addition, AC conductivity increases with frequency and reaches approximately 6⋅10− 5 S/cm at 1 MHz. The results demonstrate that the NAMA interlayer significantly modifies the dielectric and electrical characteristics of the MIS structure and may provide potential advantages for frequency-dependent semiconductor device applications.