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<p>The effect of Cu doping on the structural, optical, and electrical properties of spray-deposited ZnS films has been investigated, as a function of Cu concentration (C<sub>Cu</sub> = 0, 2, 4, 6, 8, and 10%), by X-ray diffraction (XRD), UV-visible spectroscopy, and the measurement of the electrical resistivity, respectively. According to XRD patterns, the deposited films belong to the wurtzite-10&#xa0;H hexagonal ZnS. As a function of C<sub>Cu</sub>, the inter-planar distance and the crystallite size decreased, indicating a decrease of the crystalline quality of Cu-doped ZnS films. For C<sub>Cu</sub> = 10%, the hexagonal ZnS structure changed from wurtzite-10&#xa0;H to wurtzite 8&#xa0;H type. The UV-visible spectroscopy showed that the mean transmittance varied between 60 and 74% and the band gap energy increased from 3.64 to 3.73&#xa0;eV when C<sub>Cu</sub> increased from 0 to 10%. A linear fit of the variation of the band gap energy as a function of the crystallite size revealed that other factors affected the band gap energy. The electrical resistivity increased from 150 Ω·cm to reach a maximum value of 5.58 kΩ·cm for C<sub>Cu</sub> = 10%. Confronting this result to the Mayadas-Shadzkes model revealed that the increase of the electrical resistivity may be mainly related to the poor crystalline quality. The variation of all parameters, determined in this work, is within an interval that makes the deposited films suitable for application in numerous domains such as optoelectronics, spinotronics, and photocatalysis.</p>

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Copper concentration dependence of structural, optical and electrical properties of Cu-doped ZnS

  • 期刊论文

  • 发表日期：

    2026年6月3日

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  • A. Messiad,
  • A. Kabir,
  • C. Sedrati

摘要

The effect of Cu doping on the structural, optical, and electrical properties of spray-deposited ZnS films has been investigated, as a function of Cu concentration (CCu = 0, 2, 4, 6, 8, and 10%), by X-ray diffraction (XRD), UV-visible spectroscopy, and the measurement of the electrical resistivity, respectively. According to XRD patterns, the deposited films belong to the wurtzite-10 H hexagonal ZnS. As a function of CCu, the inter-planar distance and the crystallite size decreased, indicating a decrease of the crystalline quality of Cu-doped ZnS films. For CCu = 10%, the hexagonal ZnS structure changed from wurtzite-10 H to wurtzite 8 H type. The UV-visible spectroscopy showed that the mean transmittance varied between 60 and 74% and the band gap energy increased from 3.64 to 3.73 eV when CCu increased from 0 to 10%. A linear fit of the variation of the band gap energy as a function of the crystallite size revealed that other factors affected the band gap energy. The electrical resistivity increased from 150 Ω·cm to reach a maximum value of 5.58 kΩ·cm for CCu = 10%. Confronting this result to the Mayadas-Shadzkes model revealed that the increase of the electrical resistivity may be mainly related to the poor crystalline quality. The variation of all parameters, determined in this work, is within an interval that makes the deposited films suitable for application in numerous domains such as optoelectronics, spinotronics, and photocatalysis.