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<p>In this study, to improve the performance of conventional silicon (Si)-based optoelectronic devices, an Au/FMDD/p-Si/Al Metal-Interlayer-Semiconductor (MIS) structure was successfully fabricated by introducing a new organic interlayer material at the metal-semiconductor interface. In this context, a new fluorene-based aldodioxime derivative, (1E,1’E)-4,4’-((9<i>H</i>-fluoren-9-ylidene)methylene)dibenzaldehyde dioxime (FMDD), was designed, synthesized, and spectroscopically characterized. The target compound was successfully obtained in three steps-bromination, Suzuki coupling, and condensation reactions-starting from commercially available 9<i>H</i>-fluoren-9-one (<b>1</b>). The structure of the product was confirmed by <sup>1</sup>H NMR, <sup>13</sup>C NMR, and MS analyses. The morphological, structural and optical properties of the FMDD interlayer film were investigated in detail by SEM, AFM, XRD and UV-Vis analyses. The analyses revealed that the FMDD film was not amorphous but had a nanogranular (20–50&#xa0;nm) crystalline structure and a rough surface. Optical analysis confirmed that FMDD has a wide band gap of ~ 2.25&#xa0;eV and exhibits high optical transparency to visible/near-infrared light above 550&#xa0;nm. The electrical properties (I-V) of the device were investigated under darkness and illumination. In darkness, the diode exhibited good rectifying characteristics with an ideality factor (n) of 1.21 and a rectification ratio (RR) of 144.3. However, under illumination, the series resistance (R<sub>s</sub>) increased sharply up to 3386 Ω and n increased to 3.14, severely limiting the photovoltaic performance of the device. Consequently, the device exhibited a very low fill factor (FF ~ 22.9%) and a maximum efficiency (η) of 0.34%. Analyses performed in photodiode mode (under V = -2&#xa0;V) revealed a much more interesting behavior: the photocurrent (I<sub>ph</sub>), photosensitivity (S), and detectability (D<sup>*</sup>) of the device remained constant at low levels up to 60 mW/cm² light intensity, but showed a sharp and sudden increase above this threshold. This superlinear behavior was attributed to a photoconductive mechanism triggered by the saturation of the trap states at the interface under high photon flux. These results indicate that the FMDD interlayer is a potential candidate for achieving nonlinear and tunable photoresponse properties in Si-based devices.</p>

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Optoelectronic performance of Au/FMDD/p-Si/Al structure: photodiode and photovoltaic analysis

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月22日

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  • Ali Rıza Deniz,
  • Musa Erdoğan,
  • Zakir Çaldıran,
  • Gökhan Gök,
  • Erbay Kalay

摘要

In this study, to improve the performance of conventional silicon (Si)-based optoelectronic devices, an Au/FMDD/p-Si/Al Metal-Interlayer-Semiconductor (MIS) structure was successfully fabricated by introducing a new organic interlayer material at the metal-semiconductor interface. In this context, a new fluorene-based aldodioxime derivative, (1E,1’E)-4,4’-((9H-fluoren-9-ylidene)methylene)dibenzaldehyde dioxime (FMDD), was designed, synthesized, and spectroscopically characterized. The target compound was successfully obtained in three steps-bromination, Suzuki coupling, and condensation reactions-starting from commercially available 9H-fluoren-9-one (1). The structure of the product was confirmed by 1H NMR, 13C NMR, and MS analyses. The morphological, structural and optical properties of the FMDD interlayer film were investigated in detail by SEM, AFM, XRD and UV-Vis analyses. The analyses revealed that the FMDD film was not amorphous but had a nanogranular (20–50 nm) crystalline structure and a rough surface. Optical analysis confirmed that FMDD has a wide band gap of ~ 2.25 eV and exhibits high optical transparency to visible/near-infrared light above 550 nm. The electrical properties (I-V) of the device were investigated under darkness and illumination. In darkness, the diode exhibited good rectifying characteristics with an ideality factor (n) of 1.21 and a rectification ratio (RR) of 144.3. However, under illumination, the series resistance (Rs) increased sharply up to 3386 Ω and n increased to 3.14, severely limiting the photovoltaic performance of the device. Consequently, the device exhibited a very low fill factor (FF ~ 22.9%) and a maximum efficiency (η) of 0.34%. Analyses performed in photodiode mode (under V = -2 V) revealed a much more interesting behavior: the photocurrent (Iph), photosensitivity (S), and detectability (D*) of the device remained constant at low levels up to 60 mW/cm² light intensity, but showed a sharp and sudden increase above this threshold. This superlinear behavior was attributed to a photoconductive mechanism triggered by the saturation of the trap states at the interface under high photon flux. These results indicate that the FMDD interlayer is a potential candidate for achieving nonlinear and tunable photoresponse properties in Si-based devices.