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<p>The present exploration reveals the synthesis of an eco-friendly lanthanum (La<sup>3+</sup>) doped bismuth based mixed-metal oxide ceramic [Bi<sub>2</sub>Ni<sub>2</sub>Fe<sub>2−x</sub>La<sub>x</sub>O<sub>8</sub>] through an optimized solid-state step-sintering route. Structural analysis confirms a stable lattice with significantly reduced micro-strain (0.00193) and dislocation density (6.78 × 10<sup>14</sup>m<sup>− 2</sup>). Scanning electron microscopy (SEM) morphology and topographical evaluation reveal a uniform polycrystalline microstructure with well-dispersed grains (0.1–1.4&#xa0;μm) and moderate isotropy (~ 64%), promoting reduced grain-boundary scattering. Dielectric studies demonstrate excellent frequency–temperature stability, high permittivity, low dielectric loss at elevated frequencies, and non-Debye relaxation associated with hopping-type semiconducting conduction mechanism. The material exhibits enhanced capacitive temperature sensitivity (~ 904 pF℃<sup>−1</sup>) and a stable optical energy band gap (3.35&#xa0;eV), suggesting coexistence of wide-band-gap semiconductor and capacitive characteristics. These synergistic features clearly differentiate the La-doped bismuth nickel ferrite and make it a promising candidate for capacitive sensing and wide range of advanced electronics applications.</p>

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Synthesis and multifunctional characterization of lanthanum (La3+) substituted bismuth based mixed-metal oxide ceramic material for advanced electronic applications

  • 期刊论文

  • 发表日期：

    2026年5月21日

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  • Priyadarshini Shivani Sahoo,
  • Satyanarayan Bhuyan,
  • Priyabrata Pattanaik,
  • Jagadish Chandra Padhi

摘要

The present exploration reveals the synthesis of an eco-friendly lanthanum (La3+) doped bismuth based mixed-metal oxide ceramic [Bi2Ni2Fe2−xLaxO8] through an optimized solid-state step-sintering route. Structural analysis confirms a stable lattice with significantly reduced micro-strain (0.00193) and dislocation density (6.78 × 1014m− 2). Scanning electron microscopy (SEM) morphology and topographical evaluation reveal a uniform polycrystalline microstructure with well-dispersed grains (0.1–1.4 μm) and moderate isotropy (~ 64%), promoting reduced grain-boundary scattering. Dielectric studies demonstrate excellent frequency–temperature stability, high permittivity, low dielectric loss at elevated frequencies, and non-Debye relaxation associated with hopping-type semiconducting conduction mechanism. The material exhibits enhanced capacitive temperature sensitivity (~ 904 pF℃−1) and a stable optical energy band gap (3.35 eV), suggesting coexistence of wide-band-gap semiconductor and capacitive characteristics. These synergistic features clearly differentiate the La-doped bismuth nickel ferrite and make it a promising candidate for capacitive sensing and wide range of advanced electronics applications.