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<p>The pulsed laser deposition (PLD) technique was used to fabricate a photonic detector which is based on the AlGaN nanostructures deposited on porous silicon (PSi). To examine how the substrate temperature of the device influences its structural, optical and photodetection characteristics, the deposition was conducted with a constant laser energy of 850 mJ with substrate temperatures of 250 to 450 °C. The X-ray diffraction showed that the crystallinity increased with temperature, with the best crystalline quality of 400–450 °C. The surface examinations showed increased uniformity and decreased roughness with a minimum roughness of (Ra = 0.75 nm) at 350°C. The transparency (high 90–100% in the visible) was found to be high in the visible range, with the optical bandgap observed to increase with the temperature (between 4.2eV and 4.5eV). These findings prove that AlGaN/PSi photonic detectors produced using PLD demonstrate encouraging ultraviolet detection characteristics, and the best deposition temperature varies according to the intended application.</p>

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Effect of deposition temperature on the structural, morphological, and optical properties of AlGaN/PSi nanocomposites prepared by pulsed laser deposition

  • 期刊论文

  • 发表日期：

    2026年5月20日

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  • Hiba B. A. Hadi,
  • Makram A. Fakhri,
  • Ali Abdul Khaleq Alwahib,
  • Subash C. B. Gopinath,
  • Mother A. Qaeed,
  • Ahmed A. Al-Amiery

摘要

The pulsed laser deposition (PLD) technique was used to fabricate a photonic detector which is based on the AlGaN nanostructures deposited on porous silicon (PSi). To examine how the substrate temperature of the device influences its structural, optical and photodetection characteristics, the deposition was conducted with a constant laser energy of 850 mJ with substrate temperatures of 250 to 450 °C. The X-ray diffraction showed that the crystallinity increased with temperature, with the best crystalline quality of 400–450 °C. The surface examinations showed increased uniformity and decreased roughness with a minimum roughness of (Ra = 0.75 nm) at 350°C. The transparency (high 90–100% in the visible) was found to be high in the visible range, with the optical bandgap observed to increase with the temperature (between 4.2eV and 4.5eV). These findings prove that AlGaN/PSi photonic detectors produced using PLD demonstrate encouraging ultraviolet detection characteristics, and the best deposition temperature varies according to the intended application.