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<p>This study investigates the annealing-induced modifications in Ag₅Sb₂₀S₃₅Se₄₀ (~ 800&#xa0;nm) chalcogenide thin film fabricated by thermal evaporation followed by annealing at different temperatures. Energy-dispersive X-ray spectroscopy (EDX) spectra confirmed the elemental composition and uniform distribution, while field-emission scanning electron microscopy (FESEM) micrographs illustrate the surface morphological changes induced by annealing. X-ray diffraction (XRD) analysis proved the structural transition from amorphous to crystalline phase, while UV–Vis spectral data indicated systematic modulation of the material’s linear as well as nonlinear optical responses with increasing annealing temperature. Upon annealing, the direct optical gap increased from 1.68&#xa0;eV to 2.2&#xa0;eV, accompanied by a reduction in the static refractive index (2.89 to 2.65), third-order nonlinear susceptibility (1.99 × 10⁻¹¹ esu to 0.912 × 10⁻¹¹ esu), and nonlinear refractive index (2.6 × 10⁻¹⁰ esu to 1.3 × 10⁻¹⁰ esu). The measurement of the contact angle suggested that annealing reduced hydrophobicity. The photo responsivity increased from 1.32<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\times\)</EquationSource> </InlineEquation>10<sup>−6</sup> to 6.56 <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(\times\)</EquationSource> </InlineEquation>10<sup>− 6</sup> AW<sup>− 1</sup> and detectivity also enhanced from 1.53 <InlineEquation ID="IEq3"> <EquationSource Format="TEX">\(\times\)</EquationSource> </InlineEquation>10<sup>7</sup> to 3.77 <InlineEquation ID="IEq4"> <EquationSource Format="TEX">\(\times\)</EquationSource> </InlineEquation>10<sup>7</sup> Jones upon annealing. The structural, optical and electrical changes induced by annealing suggest that the Ag₅Sb₂₀S₃₅Se₄₀ thin films under study are appropriate for use in optoelectronic and photodetection devices.</p> Graphical abstract <p></p>

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Temperature-dependent phase transformation induced enhanced photoconductivity with tunable optical, surface morphology, wettability in Ag₅Sb₂₀S₃₅Se₄₀ for optoelectronic applications

  • 期刊论文

  • 发表日期：

    2026年3月17日

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  • Basanti Mohanty,
  • S. Das,
  • P. Priyadarshini,
  • D. Alagarasan,
  • R. Naik

摘要

This study investigates the annealing-induced modifications in Ag₅Sb₂₀S₃₅Se₄₀ (~ 800 nm) chalcogenide thin film fabricated by thermal evaporation followed by annealing at different temperatures. Energy-dispersive X-ray spectroscopy (EDX) spectra confirmed the elemental composition and uniform distribution, while field-emission scanning electron microscopy (FESEM) micrographs illustrate the surface morphological changes induced by annealing. X-ray diffraction (XRD) analysis proved the structural transition from amorphous to crystalline phase, while UV–Vis spectral data indicated systematic modulation of the material’s linear as well as nonlinear optical responses with increasing annealing temperature. Upon annealing, the direct optical gap increased from 1.68 eV to 2.2 eV, accompanied by a reduction in the static refractive index (2.89 to 2.65), third-order nonlinear susceptibility (1.99 × 10⁻¹¹ esu to 0.912 × 10⁻¹¹ esu), and nonlinear refractive index (2.6 × 10⁻¹⁰ esu to 1.3 × 10⁻¹⁰ esu). The measurement of the contact angle suggested that annealing reduced hydrophobicity. The photo responsivity increased from 1.32 \(\times\) 10−6 to 6.56 \(\times\) 10− 6 AW− 1 and detectivity also enhanced from 1.53 \(\times\) 107 to 3.77 \(\times\) 107 Jones upon annealing. The structural, optical and electrical changes induced by annealing suggest that the Ag₅Sb₂₀S₃₅Se₄₀ thin films under study are appropriate for use in optoelectronic and photodetection devices.

Graphical abstract