Investigation into the influence of sample temperature on electron beam width in SEM through Monte-Carlo simulation
摘要
This research examines how the intrinsic temperature of the sample affects the line-scan profile of a silicon trapezoidal structure on a silicon substrate, considering various electron beam widths, through the use of Monte-Carlo simulation. This study reveals that the line-scan profile is sensitive to both sample temperature and electron beam width. More precisely, increasing the sample temperature produces effects analogous to either decreasing or increasing the primary electron beam size, depending on whether the primary electron energy is low or high. The fundamental mechanism is thoroughly analyzed. This research holds promise for offering significant insights into temperature measurement techniques for nanostructures employing SEMs.