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<p>Indium gallium nitride (InGaN) nanostructures were deposited on porous silicon (P-Si) substrates using pulsed laser deposition (PLD) to enhance the integration of III-nitride materials with silicon-based optoelectronic platforms. The porous template improved film adhesion, crystallinity, and light–matter interaction, enabling efficient carrier generation and transport. The resulting InGaN/P-Si heterojunction exhibited a broad photoresponse from the UV to visible region, with a peak detectivity of 11.9 × 10¹³ Jones, responsivity of 0.36&#xa0;A/W, and external quantum efficiency (EQE) of ~ 1.05% at 310&#xa0;nm. The device also showed rise and decay times (0.56&#xa0;s and 0.25&#xa0;s), indicating stable carrier dynamics. These results demonstrate that porous-silicon-assisted PLD growth provides a promising route for achieving high-detectivity, silicon-compatible broadband photodetectors for next-generation optoelectronic systems.</p>

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Structural, optical, and electrical investigators of ingan nanostructures growing on porous silicon using pulsed laser deposition technique

  • 期刊论文

  • 发表日期：

    2026年2月27日

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  • Reem Alzubaidi,
  • Makram A. Fakhri,
  • László Pohl

摘要

Indium gallium nitride (InGaN) nanostructures were deposited on porous silicon (P-Si) substrates using pulsed laser deposition (PLD) to enhance the integration of III-nitride materials with silicon-based optoelectronic platforms. The porous template improved film adhesion, crystallinity, and light–matter interaction, enabling efficient carrier generation and transport. The resulting InGaN/P-Si heterojunction exhibited a broad photoresponse from the UV to visible region, with a peak detectivity of 11.9 × 10¹³ Jones, responsivity of 0.36 A/W, and external quantum efficiency (EQE) of ~ 1.05% at 310 nm. The device also showed rise and decay times (0.56 s and 0.25 s), indicating stable carrier dynamics. These results demonstrate that porous-silicon-assisted PLD growth provides a promising route for achieving high-detectivity, silicon-compatible broadband photodetectors for next-generation optoelectronic systems.