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<p>Silicon carbide (SiC) is a wide-bandgap semiconductor valued for durability and high performance, enabling advanced applications. This study investigates femtosecond-laser grooving of 4&#xa0;H-SiC to assess the effects of incident face and crystallographic direction on groove morphology, and demonstrates a finishing step using the same laser source to reduce oxides on in-groove nanostructures. V-shaped grooves with in-groove nanostructures were obtained. A subsequent secondary finishing step, implemented with the same laser source, reduced the oxygen content of the nanostructures, yielding micro/nanostructured grooves with reduced oxygen content. These results show that, under the tested conditions, femtosecond-laser grooving produced crack-free grooves, and that the finishing step reduced the oxygen content of in-groove nanostructures.</p>

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Low-oxygen micro/nanostructured grooves in 4 H-SiC by femtosecond-laser grooving and finishing

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月25日

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  • An-Sheng Chung,
  • Jia-Fan Kuo,
  • Chung-Wei Cheng

摘要

Silicon carbide (SiC) is a wide-bandgap semiconductor valued for durability and high performance, enabling advanced applications. This study investigates femtosecond-laser grooving of 4 H-SiC to assess the effects of incident face and crystallographic direction on groove morphology, and demonstrates a finishing step using the same laser source to reduce oxides on in-groove nanostructures. V-shaped grooves with in-groove nanostructures were obtained. A subsequent secondary finishing step, implemented with the same laser source, reduced the oxygen content of the nanostructures, yielding micro/nanostructured grooves with reduced oxygen content. These results show that, under the tested conditions, femtosecond-laser grooving produced crack-free grooves, and that the finishing step reduced the oxygen content of in-groove nanostructures.