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<p>Hafnium dioxide, or hafnia, is an extremely sought-after material in opto- and nanoelectronics for creating optical coatings and various functional media to have stable performance characteristics under varying thermal, electrical and other operating conditions. In this paper, we have investigated the behavior of the optical properties in a wide temperature range of 7—296 K for hafnia thin films exhibiting an amorphous structure. For the first time we have examined the temperature effects in the energy gap of HfO<sub>2</sub> films and estimated the effective phonon energy of ℏω = 30 ± 3 meV responsible for observed thermally assisted shift of electronic levels. It has been shown that the electron–phonon interaction in the oxygen subsystem predominantly causes the observed changes. The obtained values of refractive index values for the tested films are established to be compatible with independent predicted data and to decrease as the temperature drops. The energy structure and electron–phonon interaction features that have been found are critical for forecasting how hafnia-thin-film-based optoelectronic devices will behave across a wide temperature range.</p>

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Temperature behavior of the energy gap in amorphous HfO2 thin films

  • 期刊论文

  • 发表日期：

    2026年2月27日

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  • A. O. Shilov,
  • S. S. Savchenko,
  • A. S. Vokhmintsev,
  • M. S. Karabanalov,
  • A. V. Chukin,
  • A. V. Ishchenko,
  • V. A. Gritsenko,
  • I. A. Weinstein

摘要

Hafnium dioxide, or hafnia, is an extremely sought-after material in opto- and nanoelectronics for creating optical coatings and various functional media to have stable performance characteristics under varying thermal, electrical and other operating conditions. In this paper, we have investigated the behavior of the optical properties in a wide temperature range of 7—296 K for hafnia thin films exhibiting an amorphous structure. For the first time we have examined the temperature effects in the energy gap of HfO2 films and estimated the effective phonon energy of ℏω = 30 ± 3 meV responsible for observed thermally assisted shift of electronic levels. It has been shown that the electron–phonon interaction in the oxygen subsystem predominantly causes the observed changes. The obtained values of refractive index values for the tested films are established to be compatible with independent predicted data and to decrease as the temperature drops. The energy structure and electron–phonon interaction features that have been found are critical for forecasting how hafnia-thin-film-based optoelectronic devices will behave across a wide temperature range.