Scholarlink

<p> Injection-Dependent Lifetime Spectroscopy (IDLS) is used within this study for a parameterisation of interstitial iron Fe<sub>i</sub> in p type Czochralski &lt;100&gt; silicon wafers. The first step is dedicated to study the presence of iron contamination using the crossover method for Fe<sub>i</sub> and Iron-Bore pairs (Fe-B) dissociation, then the IDLS supported by the Defect Parameter Solution Surface (DPSS) are performed for the determination of capture coefficient σ<sub>n</sub>/σ<sub>p</sub> (σ<sub>n</sub>, σ<sub>p</sub> are the capture cross section for electrons and holes respectively) and the energy level in the band gap of Fe<sub>i</sub> related defect (E<sub>t</sub>). The obtained parameters, σ<sub>n</sub>/σ<sub>p</sub>= 21 and E<sub>t</sub>= E<sub>V</sub>+0.38 eV, where E<sub>v</sub> is the valence band energy, were used to fit the experimental Shockley–Read–Hall (SRH) lifetime provided by Quasi-Steady-State PhotoConductance measurement (QSSPC) to assess σ<sub>n</sub> and σ<sub>p</sub>. The objective of the second part of this work was to demonstrate the relationship between σ<sub>n</sub> and the concentration of [Fe<sub>i</sub>]. It is important to note that the electron-capture cross-section of Fe<sub>i</sub> has been determined less accurately in the literature compared to the hole-capture cross-section and the energy level within the band gap E<sub>t</sub>. To validate the relationship between σ<sub>n</sub> and the concentration of Fe<sub>i</sub>, we assumed a value of 7×10<sup>-17</sup> cm<sup>2</sup> for σ<sub>p</sub> and a value of E<sub>V</sub>+0.38 eV for energy level of trap E<sub>t</sub>, as reported in the literature. Subsequently, the value of σ<sub>n</sub> was determined through the application of the equation K = σ<sub>n</sub>/σ<sub>p</sub>, which yielded a result of 21. The resulting parameters were then employed in the fitting of experimental data of the Shockley–Read–Hall lifetime (τ<sub>srh</sub>) versus injection level (∆n) [cm<sup>-3</sup>].</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Parameterisation of interstitial iron-related defects in silicon wafers using injection-dependent lifetime spectroscopy

  • 期刊论文

  • 发表日期：

    2026年3月11日

查看全文
  • Mohamed MaoudJ,
  • Djoudi Bouhafs

摘要

Injection-Dependent Lifetime Spectroscopy (IDLS) is used within this study for a parameterisation of interstitial iron Fei in p type Czochralski <100> silicon wafers. The first step is dedicated to study the presence of iron contamination using the crossover method for Fei and Iron-Bore pairs (Fe-B) dissociation, then the IDLS supported by the Defect Parameter Solution Surface (DPSS) are performed for the determination of capture coefficient σn/σp (σn, σp are the capture cross section for electrons and holes respectively) and the energy level in the band gap of Fei related defect (Et). The obtained parameters, σn/σp= 21 and Et= EV+0.38 eV, where Ev is the valence band energy, were used to fit the experimental Shockley–Read–Hall (SRH) lifetime provided by Quasi-Steady-State PhotoConductance measurement (QSSPC) to assess σn and σp. The objective of the second part of this work was to demonstrate the relationship between σn and the concentration of [Fei]. It is important to note that the electron-capture cross-section of Fei has been determined less accurately in the literature compared to the hole-capture cross-section and the energy level within the band gap Et. To validate the relationship between σn and the concentration of Fei, we assumed a value of 7×10-17 cm2 for σp and a value of EV+0.38 eV for energy level of trap Et, as reported in the literature. Subsequently, the value of σn was determined through the application of the equation K = σn/σp, which yielded a result of 21. The resulting parameters were then employed in the fitting of experimental data of the Shockley–Read–Hall lifetime (τsrh) versus injection level (∆n) [cm-3].