Scholarlink

<p>In this study, zinc oxide (ZnO) thin films doped with tungsten trioxide (WO<sub>3</sub>) have been grown on glass substrates employing the Pulsed Laser Deposition (PLD) technique. The structural, morphological, optical, and electrical characteristics of the thin films have been examined at different substrate temperatures and doping concentrations of WO<sub>3</sub>. Films fabricated at higher substrate temperatures with low doping levels exhibit better crystallinity, as determined by X-ray diffraction (XRD) analysis. The surface morphological results of the SEM analysis are also consistent with the XRD results. The changes in the bandgap have been measured by photoluminescence (PL) spectra. The patterned aluminum contacts were deposited using a thermal evaporator to create the metal-semiconductor-metal (MSM) photodetectors. The current-voltage (I-V) curves and photo response for the thin films under dark and UV illumination have been measured in detail to investigate UV photodetection. The charge trapping and detrapping at the defect states of ZnO have also been investigated. The findings have demonstrated that a ZnO photodetector with optimal WO<sub>3</sub> doping and deposited at an appropriate substrate temperature significantly reduces the response time and improves the responsivity and detectivity.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Ameliorating the UV detection properties of ZnO thin films by optimizing the defects

  • 期刊论文

  • 发表日期：

    2026年2月16日

查看全文
  • Maryam,
  • Rizwan Ahmed

摘要

In this study, zinc oxide (ZnO) thin films doped with tungsten trioxide (WO3) have been grown on glass substrates employing the Pulsed Laser Deposition (PLD) technique. The structural, morphological, optical, and electrical characteristics of the thin films have been examined at different substrate temperatures and doping concentrations of WO3. Films fabricated at higher substrate temperatures with low doping levels exhibit better crystallinity, as determined by X-ray diffraction (XRD) analysis. The surface morphological results of the SEM analysis are also consistent with the XRD results. The changes in the bandgap have been measured by photoluminescence (PL) spectra. The patterned aluminum contacts were deposited using a thermal evaporator to create the metal-semiconductor-metal (MSM) photodetectors. The current-voltage (I-V) curves and photo response for the thin films under dark and UV illumination have been measured in detail to investigate UV photodetection. The charge trapping and detrapping at the defect states of ZnO have also been investigated. The findings have demonstrated that a ZnO photodetector with optimal WO3 doping and deposited at an appropriate substrate temperature significantly reduces the response time and improves the responsivity and detectivity.