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<p>Radiation-hardened detectors are crucial for space missions, nuclear monitoring, and high-energy physics experiments, where ionizing radiation severely limits the lifetime and stability of conventional devices. In this work, we present a multi-layer heterostructure detector integrating ZnO (50&#xa0;nm), MoS₂ (5&#xa0;nm), h-BN (2&#xa0;nm), trilayer graphene, and black phosphorus (10&#xa0;nm), fabricated through sequential CVD growth and polymer-assisted transfer. The materials stack is optimized via coupled TCAD ATLAS and COMSOL simulations to suppress displacement damage, interface traps, and carrier leakage under total ionizing dose (<i>TID</i>) and single event effects (<i>SEE</i>). Processing scalability and uniformity were assessed through simulation-guided parameter calibration, benchmarked to experimental Raman, AFM, and X-ray data reported in previous studies, confirming the methodological reproducibility within the modeled framework.Under pristine conditions, the device achieves a dark-current density of 2.3 × 10⁻⁹ A/cm², detectivity of 8.2 × 10¹² Jones, and responsivity of 4.7 × 10³ A/W at 30&#xa0;keV. Upon exposure to ≥ 5.5&#xa0;kGy ionizing radiation, threshold-voltage shifts remain below 2.8&#xa0;V, with 87% recovery after low-temperature annealing (150&#xa0;°C). Performance modeling predicts &lt; 3% pixel-to-pixel variation for 10,000-element arrays, confirming the design’s potential for wafer-scale fabrication and &gt; 10-year operation in harsh environments. This study demonstrates the combined advantages of precise materials processing and physics-based simulation in enabling next-generation, long-lived radiation-hard detectors.</p>

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Multi-layer 2D heterostructures for radiation-hardened x-ray detectors: simulation-guided materials processing and performance assessment

  • 期刊论文

  • 发表日期：

    2026年2月12日

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  • Arash Vaghef-Koodehi

摘要

Radiation-hardened detectors are crucial for space missions, nuclear monitoring, and high-energy physics experiments, where ionizing radiation severely limits the lifetime and stability of conventional devices. In this work, we present a multi-layer heterostructure detector integrating ZnO (50 nm), MoS₂ (5 nm), h-BN (2 nm), trilayer graphene, and black phosphorus (10 nm), fabricated through sequential CVD growth and polymer-assisted transfer. The materials stack is optimized via coupled TCAD ATLAS and COMSOL simulations to suppress displacement damage, interface traps, and carrier leakage under total ionizing dose (TID) and single event effects (SEE). Processing scalability and uniformity were assessed through simulation-guided parameter calibration, benchmarked to experimental Raman, AFM, and X-ray data reported in previous studies, confirming the methodological reproducibility within the modeled framework.Under pristine conditions, the device achieves a dark-current density of 2.3 × 10⁻⁹ A/cm², detectivity of 8.2 × 10¹² Jones, and responsivity of 4.7 × 10³ A/W at 30 keV. Upon exposure to ≥ 5.5 kGy ionizing radiation, threshold-voltage shifts remain below 2.8 V, with 87% recovery after low-temperature annealing (150 °C). Performance modeling predicts < 3% pixel-to-pixel variation for 10,000-element arrays, confirming the design’s potential for wafer-scale fabrication and > 10-year operation in harsh environments. This study demonstrates the combined advantages of precise materials processing and physics-based simulation in enabling next-generation, long-lived radiation-hard detectors.