Effects of fluorine on the optoelectronic properties and crystal field symmetry of silicon-based erbium doped gallium oxide films and devices
摘要
The fluorine co-doped silicon-based erbium doped gallium oxide luminescent device have been fabricated. We have investigated effects of fluorine on the optoelectrical performances of devices and the crystal field symmetry of the environment where erbium ions are located. It is found that with the co-doping of fluorine, the maximum input electrical power of the device can be increased due to the improved conductivity and breakdown field, contributing to the enhanced output intensity of 5.6 µW/cm2. Based on the density functional theory calculation, the crystal field symmetry has been compared. From the symmetry evaluation standard, we have confirmed the preferred occupation site of fluorine doping. Additionally, it is proved that the C4v symmetry of the environment where erbium ions are situated will be degraded with the introduction of fluorine, leading to the remarkedly enhanced optical activity of erbium ions.