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<p>The interaction of energetic ions with semiconductor heterojunctions can significantly influence interfacial states and charge transport, thereby impacting device performance and long-term reliability. In this study, ZnO/p-Si heterojunctions were irradiated with 120&#xa0;MeV Ag⁸⁺ ions at fluences ranging from 1 × 10¹¹ to 5 × 10¹² ions·cm⁻², and their current-voltage characteristics were systematically examined. Swift heavy-ion irradiation generated lattice disorder, point defects, and interface traps, which reduced the barrier height from 0.82&#xa0;eV for the pristine diode to 0.68&#xa0;eV at 5 × 10¹² ions·cm⁻² and increased the reverse leakage current. At low fluence, transient thermal-spike effects slightly improved junction quality, whereas higher fluences produced defect-dominated transport. Under UV illumination, the irradiated heterostructure showed enhanced photocurrent, but its sensitivity decreased due to the irradiation-induced increase in dark current. These results provide important insights into radiation-driven modifications in oxide/semiconductor heterojunctions and emphasize the need to account for such effects while developing devices for radiation environments.</p>

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Swift heavy ion irradiation effects on the electrical and photonic properties of ZnO/p-Si heterojunction

  • 期刊论文

  • 发表日期：

    2026年1月26日

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  • Rekha Rani,
  • Hemant Kumar Chourasiya,
  • Jnaneswari Gellanki,
  • Renu Kumari,
  • Rajendra C Pawar,
  • Sandeep Kumar

摘要

The interaction of energetic ions with semiconductor heterojunctions can significantly influence interfacial states and charge transport, thereby impacting device performance and long-term reliability. In this study, ZnO/p-Si heterojunctions were irradiated with 120 MeV Ag⁸⁺ ions at fluences ranging from 1 × 10¹¹ to 5 × 10¹² ions·cm⁻², and their current-voltage characteristics were systematically examined. Swift heavy-ion irradiation generated lattice disorder, point defects, and interface traps, which reduced the barrier height from 0.82 eV for the pristine diode to 0.68 eV at 5 × 10¹² ions·cm⁻² and increased the reverse leakage current. At low fluence, transient thermal-spike effects slightly improved junction quality, whereas higher fluences produced defect-dominated transport. Under UV illumination, the irradiated heterostructure showed enhanced photocurrent, but its sensitivity decreased due to the irradiation-induced increase in dark current. These results provide important insights into radiation-driven modifications in oxide/semiconductor heterojunctions and emphasize the need to account for such effects while developing devices for radiation environments.