<p>Nanocrystalline yttria stabilized zirconia (YSZ) was synthesized using sol–gel and co-precipitation methods with yttria concentrations ranging from 2 to 8&#xa0;mol%. YSZ thin films were subsequently deposited onto glass substrates using spin coating from the prepared precursor solutions. Comprehensive characterization of the YSZ samples was performed using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and I-V measurement. X-ray diffraction and Raman spectroscopy confirmed that increasing yttria content promotes phase stabilization, with a predominantly cubic fluorite structure achieved at 8&#xa0;mol% yttria. SEM analysis revealed well-defined crystalline grains, although minor surface microcracks were observed, while elemental analysis verified the intended yttria doping levels. TEM and selected area electron diffraction (SAED) further confirmed the nanocrystalline nature of the material, with measured lattice spacings consistent with the cubic fluorite phase. Electrical I–V measurements performed at 450&#xa0;°C showed that 4&#xa0;mol% YSZ exhibits the highest ionic conductivity, corresponding to the lowest electrical resistance among all compositions. This enhanced conductivity at moderate doping arises from an optimal balance between oxygen-vacancy concentration and reduced defect clustering. Overall, the results demonstrate that yttria concentration plays a crucial role in controlling phase stability, lattice strain, and defect chemistry, which collectively govern oxide-ion transport. Notably, 4&#xa0;mol% YSZ emerges as a promising composition for high-temperature ionic applications, offering improved performance for solid oxide fuel cells, oxygen sensors, and thermal barrier coatings.</p>

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Influence of yttria doping on the structural properties of nano-crystalline yttria stabilized zirconia

  • Praveen Gothwal,
  • Fouran Singh,
  • Vishnu Chauhan,
  • Bhawana Joshi

摘要

Nanocrystalline yttria stabilized zirconia (YSZ) was synthesized using sol–gel and co-precipitation methods with yttria concentrations ranging from 2 to 8 mol%. YSZ thin films were subsequently deposited onto glass substrates using spin coating from the prepared precursor solutions. Comprehensive characterization of the YSZ samples was performed using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and I-V measurement. X-ray diffraction and Raman spectroscopy confirmed that increasing yttria content promotes phase stabilization, with a predominantly cubic fluorite structure achieved at 8 mol% yttria. SEM analysis revealed well-defined crystalline grains, although minor surface microcracks were observed, while elemental analysis verified the intended yttria doping levels. TEM and selected area electron diffraction (SAED) further confirmed the nanocrystalline nature of the material, with measured lattice spacings consistent with the cubic fluorite phase. Electrical I–V measurements performed at 450 °C showed that 4 mol% YSZ exhibits the highest ionic conductivity, corresponding to the lowest electrical resistance among all compositions. This enhanced conductivity at moderate doping arises from an optimal balance between oxygen-vacancy concentration and reduced defect clustering. Overall, the results demonstrate that yttria concentration plays a crucial role in controlling phase stability, lattice strain, and defect chemistry, which collectively govern oxide-ion transport. Notably, 4 mol% YSZ emerges as a promising composition for high-temperature ionic applications, offering improved performance for solid oxide fuel cells, oxygen sensors, and thermal barrier coatings.