Scholarlink

<p>In this study, ZnO and CdS thin films were synthesized using the nebulizer spray method, and their structural, optical, and electrical properties were systematically investigated. X-ray diffraction (XRD) analysis confirmed the formation of high-purity hexagonal wurtzite phases for both ZnO and CdS. Optical measurements revealed wide band gaps of 3.30&#xa0;eV for ZnO and 2.43&#xa0;eV for CdS, along with high transmittance in the visible range. Scanning electron microscopy (SEM) images showed that both films consisted of uniformly distributed and densely packed nanostructures. The current–voltage (I–V) characteristics of the Ag/CdS/ZnO/ITO heterojunction were measured to evaluate its rectifying behavior. The estimated ideality factor, barrier height, and saturation current were 1.88, 0.72&#xa0;eV, and 4.26 × 10⁻⁸ A, respectively, indicating typical Schottky diode behavior. Compared to individual ZnO and CdS metal–semiconductor (MS) photodetectors, the heterostructure demonstrated significantly improved optoelectronic performance, with a high photosensitivity of approximately 525 and a photoresponsivity of 0.72&#xa0;A/W. The ITO/ZnO/CdS/Ag heterostructure, which showed the best performance under visible light, also exhibited the highest optoelectronic performance in measurements under single wavelength light (532&#xa0;nm), reaching 0.34&#xa0;A/W photoresponsivity, 78.5% EQE and 5.1 × 10¹¹ Jones detectivity values ​​and also gave a very fast response with 0.15&#xa0;s rise time and 0.23&#xa0;s decay time. These results highlight the potential of the Ag/CdS/ZnO/ITO structure for broadband and low-intensity light detection applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Electrical properties of Ag/CdS/ZnO/ITO Schottky photodiode

  • 期刊论文

  • 发表日期：

    2026年1月6日

查看全文
  • Serif Ruzgar,
  • Nurgül Özbay

摘要

In this study, ZnO and CdS thin films were synthesized using the nebulizer spray method, and their structural, optical, and electrical properties were systematically investigated. X-ray diffraction (XRD) analysis confirmed the formation of high-purity hexagonal wurtzite phases for both ZnO and CdS. Optical measurements revealed wide band gaps of 3.30 eV for ZnO and 2.43 eV for CdS, along with high transmittance in the visible range. Scanning electron microscopy (SEM) images showed that both films consisted of uniformly distributed and densely packed nanostructures. The current–voltage (I–V) characteristics of the Ag/CdS/ZnO/ITO heterojunction were measured to evaluate its rectifying behavior. The estimated ideality factor, barrier height, and saturation current were 1.88, 0.72 eV, and 4.26 × 10⁻⁸ A, respectively, indicating typical Schottky diode behavior. Compared to individual ZnO and CdS metal–semiconductor (MS) photodetectors, the heterostructure demonstrated significantly improved optoelectronic performance, with a high photosensitivity of approximately 525 and a photoresponsivity of 0.72 A/W. The ITO/ZnO/CdS/Ag heterostructure, which showed the best performance under visible light, also exhibited the highest optoelectronic performance in measurements under single wavelength light (532 nm), reaching 0.34 A/W photoresponsivity, 78.5% EQE and 5.1 × 10¹¹ Jones detectivity values ​​and also gave a very fast response with 0.15 s rise time and 0.23 s decay time. These results highlight the potential of the Ag/CdS/ZnO/ITO structure for broadband and low-intensity light detection applications.