Scholarlink

<p>Due to its low cost, non-toxicity, and ease of availability, zinc oxide (ZnO) thin film is a promising substitute for ITO in optoelectronic applications. We have used RF sputtering to deposit ZnO thin films as transparent conducting oxide (TCO) films on glass substrates at varying substrate temperatures. It was examined how the substrate temperature affected the optical, morphological, and structural characteristics of ZnO thin films. A strong preferred orientation along the (002) plane, which is highly dependent on substrate temperature, is revealed by X-ray diffraction (XRD) measurements. Additionally, as the substrate temperature rises, grain size increases. Scanning electron microscope (SEM) micrographs show how the structure grows and how the surface roughness changes as the substrate temperature rises. With a sharp absorption edge at 375&#xa0;nm, which closely matches the intrinsic band gap of ZnO (~ 3.3&#xa0;eV), optical absorption spectra reveal high transparency of the film (95% transmission) in the visible region. As per photoluminescence (PL), the UV PL emission in ZnO thin films can be affected by both crystal quality and stoichiometry. When compared to other substrate temperatures, samples deposited at 175&#xa0;°C exhibit superior properties. We annealed (post-deposition) the sample, which had excellent characteristics (ZnO thin film deposited at 175&#xa0;°C), at four different temperatures to observe the further impact of the thermal process on the structural, morphological, and optical properties of ZnO thin film. At last, the I-V curve for the fabricated device at different substrate temperature were shown.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Temperature-dependent characterization of RF-Sputtered ZnO thin films for optoelectronic applications

  • 期刊论文

  • 发表日期：

    2026年1月7日

查看全文
  • Pranaw Kumar,
  • Mukul Kumar Das

摘要

Due to its low cost, non-toxicity, and ease of availability, zinc oxide (ZnO) thin film is a promising substitute for ITO in optoelectronic applications. We have used RF sputtering to deposit ZnO thin films as transparent conducting oxide (TCO) films on glass substrates at varying substrate temperatures. It was examined how the substrate temperature affected the optical, morphological, and structural characteristics of ZnO thin films. A strong preferred orientation along the (002) plane, which is highly dependent on substrate temperature, is revealed by X-ray diffraction (XRD) measurements. Additionally, as the substrate temperature rises, grain size increases. Scanning electron microscope (SEM) micrographs show how the structure grows and how the surface roughness changes as the substrate temperature rises. With a sharp absorption edge at 375 nm, which closely matches the intrinsic band gap of ZnO (~ 3.3 eV), optical absorption spectra reveal high transparency of the film (95% transmission) in the visible region. As per photoluminescence (PL), the UV PL emission in ZnO thin films can be affected by both crystal quality and stoichiometry. When compared to other substrate temperatures, samples deposited at 175 °C exhibit superior properties. We annealed (post-deposition) the sample, which had excellent characteristics (ZnO thin film deposited at 175 °C), at four different temperatures to observe the further impact of the thermal process on the structural, morphological, and optical properties of ZnO thin film. At last, the I-V curve for the fabricated device at different substrate temperature were shown.