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<p>In this work, the effects of Ta<sub>2</sub>O<sub>5</sub> incorporation on the structure and dielectric properties of BT–BNT ceramics were systematically investigated. Ta<sub>2</sub>O<sub>5</sub> addition was found to reduce tetragonality and improve the temperature stability of the dielectric permittivity. At Ta<sub>2</sub>O<sub>5</sub> contents of 3 and 3.5&#xa0;mol%, the room-temperature relative permittivities were 1143 and 1074, respectively, with capacitance variation within ± 15% over − 55 to 200&#xa0;°C, meeting the X9R specification. However, both compositions exhibited a pronounced increase in dielectric loss above 100&#xa0;°C, limiting their practical applicability. By introducing 0.8&#xa0;mol% MnO<sub>2</sub> into the Ta-optimized composition (x = 0.03), the room-temperature dielectric loss was reduced to 0.01, and the high-temperature loss remained below 0.01 over the 100–200&#xa0;°C range. Detailed analyses indicate that the enhanced thermal stability is associated with reduced tetragonality, increased B-site disorder, and a diffuse tetragonal–cubic phase transition, which collectively modify the ferroelectric–relaxor behavior. In contrast, the suppression of high-temperature dielectric loss arises from changes in high-temperature conduction mechanisms induced by Mn modification. These findings provide a viable strategy for developing BT–BNT based X9R-type MLCCs with simultaneously improved thermal stability and low dielectric loss.</p>

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Mechanistic Insights into Ta/Mn Co-Modification for Stable X9R 0.88BaTiO3-0.12Bi1/2Na1/2TiO3 Dielectrics with Reduced High-Temperature Dielectric Loss

  • 期刊论文

  • 发表日期：

    2026年1月9日

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  • Weilin Yang,
  • Yongxing Wei,
  • Bin Yang,
  • Changqing Jin,
  • Zhong Yang,
  • Changpeng Guan,
  • Haotian Zhou,
  • Siyuan Dong,
  • Ruihua Nan,
  • Lin Hu,
  • Ling Gao,
  • Gang Xu,
  • Zhonghua Dai

摘要

In this work, the effects of Ta2O5 incorporation on the structure and dielectric properties of BT–BNT ceramics were systematically investigated. Ta2O5 addition was found to reduce tetragonality and improve the temperature stability of the dielectric permittivity. At Ta2O5 contents of 3 and 3.5 mol%, the room-temperature relative permittivities were 1143 and 1074, respectively, with capacitance variation within ± 15% over − 55 to 200 °C, meeting the X9R specification. However, both compositions exhibited a pronounced increase in dielectric loss above 100 °C, limiting their practical applicability. By introducing 0.8 mol% MnO2 into the Ta-optimized composition (x = 0.03), the room-temperature dielectric loss was reduced to 0.01, and the high-temperature loss remained below 0.01 over the 100–200 °C range. Detailed analyses indicate that the enhanced thermal stability is associated with reduced tetragonality, increased B-site disorder, and a diffuse tetragonal–cubic phase transition, which collectively modify the ferroelectric–relaxor behavior. In contrast, the suppression of high-temperature dielectric loss arises from changes in high-temperature conduction mechanisms induced by Mn modification. These findings provide a viable strategy for developing BT–BNT based X9R-type MLCCs with simultaneously improved thermal stability and low dielectric loss.