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<p>Neodymium oxide (NdOₓ) is a promising switching material for nonvolatile resistive random-access memory (RRAM), yet its behavior on flexible substrates under mechanical stress remains insufficiently explored. In this work, NdOₓ thin films were deposited by rf magnetron sputtering onto ITO/glass and flexible ITO/PEN substrates to form Al/NdOₓ/ITO metal–insulator–metal structures. Baseline evaluation on ITO/glass identified optimal sputtering conditions of 100&#xa0;W, 20&#xa0;min deposition, and 4% oxygen, yielding low operating voltages (VSET ≈ 1&#xa0;V, VRESET ≈ 1&#xa0;V), endurance of 100 cycles, and retention exceeding 10⁴ s. Mechanical reliability was further assessed on flexible substrates under bending radii of 1–5&#xa0;cm. The best performance occurred at a curvature radius of 5&#xa0;cm, maintaining stable bipolar switching for ~ 120 cycles, attributed to strain-modulated filament formation. These results confirm that NdOₓ films enable reliable, low-voltage switching on both rigid and flexible platforms, demonstrating strong potential for future wearable and deformable nonvolatile memory applications.</p>

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Research on the bipolar switching properties of flexible neodymium oxide thin film resistance random access memory devices

  • 期刊论文

  • 发表日期：

    2026年1月5日

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  • Kai-Huang Chen,
  • Ming-Cheng Kao,
  • Hsin-Chin Chen,
  • Yao-Chin Wang,
  • Chien-Min Cheng,
  • Wei-Cheng Liu

摘要

Neodymium oxide (NdOₓ) is a promising switching material for nonvolatile resistive random-access memory (RRAM), yet its behavior on flexible substrates under mechanical stress remains insufficiently explored. In this work, NdOₓ thin films were deposited by rf magnetron sputtering onto ITO/glass and flexible ITO/PEN substrates to form Al/NdOₓ/ITO metal–insulator–metal structures. Baseline evaluation on ITO/glass identified optimal sputtering conditions of 100 W, 20 min deposition, and 4% oxygen, yielding low operating voltages (VSET ≈ 1 V, VRESET ≈ 1 V), endurance of 100 cycles, and retention exceeding 10⁴ s. Mechanical reliability was further assessed on flexible substrates under bending radii of 1–5 cm. The best performance occurred at a curvature radius of 5 cm, maintaining stable bipolar switching for ~ 120 cycles, attributed to strain-modulated filament formation. These results confirm that NdOₓ films enable reliable, low-voltage switching on both rigid and flexible platforms, demonstrating strong potential for future wearable and deformable nonvolatile memory applications.