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<p>This study proposes a thorough examination of a label-free biosensor based on a drain-engineered pocket-doped and dielectrically modulated SOI Ferroelectric (Fe) gate Tunnel FET design. The n + pocket in the source TFET architecture enhances band-to-band tunnelling, enhancing the device's drain current sensitivity -a nanocavity forms between the SiO2 layer and the TiN gate on the device's source side. The device's sensing ability is evaluated using the dielectric constant as well as the positive and negative charge densities of biomolecules, specifically macromolecular polypeptides-proteins, blood glucose or glycemia, deoxyribonucleic acid (DNA), and bacteria. The device demonstrated drain current sensitivity in the order of 10<sup>9</sup>.</p>

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Label Free Bio-detection using di-electrically modulated pocket doped drain engineered ferro-electric gate tunnel FET

  • 期刊论文

  • 发表日期：

    2026年1月21日

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  • Sirisha Meriga,
  • M. Kalpana Chowdary,
  • Brinda Bhowmick,
  • C. Ganesh,
  • V. Deepak

摘要

This study proposes a thorough examination of a label-free biosensor based on a drain-engineered pocket-doped and dielectrically modulated SOI Ferroelectric (Fe) gate Tunnel FET design. The n + pocket in the source TFET architecture enhances band-to-band tunnelling, enhancing the device's drain current sensitivity -a nanocavity forms between the SiO2 layer and the TiN gate on the device's source side. The device's sensing ability is evaluated using the dielectric constant as well as the positive and negative charge densities of biomolecules, specifically macromolecular polypeptides-proteins, blood glucose or glycemia, deoxyribonucleic acid (DNA), and bacteria. The device demonstrated drain current sensitivity in the order of 109.