<p>Charge-conduction mechanisms in the Pd/n-Si Schottky diode were investigated using current-voltage (I-V) measurements over a temperature range of 20–360&#xa0;K. Variation in diode parameters with temperature indicates that silicon (Si) exhibits two distinct conduction mechanisms, with their relative dominance depending on temperature. At low temperatures, diode conduction is dominated by thermionic field emission, while at high temperatures, it is dominated by thermionic emission. At low temperatures, diode parameters exhibit strong temperature dependence, whereas at high temperatures they show little or no temperature dependence. These results are crucial to investigations aimed at enhancing the electrical properties of silicon-fabricated detectors, as they address challenges caused by charge freeze-out at low temperatures, high leakage currents, and barrier height instability at higher temperatures, which affect diode sensitivity and performance. As a result of this work, the temperature range for the desired diode properties would be identified and optimised, while minimising the range for undesired properties.</p>