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<p>The semiconductor industry is transitioning from two-dimensional (2D) to three-dimensional (3D) structures to enhance integrated circuits’ performance and density. In this study, a dual-beam laser system combining femtosecond (Fs) and continuous wave (CW) lasers was used to efficiently recrystallize amorphous silicon into high-quality polycrystalline silicon (poly-Si). The Fs laser applies localized heat in short bursts to avoid thermal damage, while the CW laser provides sustained energy to facilitate recrystallization. Experimental results and COMSOL simulations demonstrate the dual-beam system’s effectiveness in producing poly-Si with minimal thermal impact on adjacent components. Raman spectroscopy confirms the quality of the poly-Si, showing a peak close to single-crystal silicon (518.0&#xa0;cm<sup>− 1</sup>). A fabricated photodetector using nanostructured poly-Si exhibited responsivity comparable to commercial silicon photodiodes, highlighting the practical applications of our method. The dual-beam laser system offers a promising solution for future semiconductor technologies by minimizing thermal damage and ensuring effective recrystallization.</p>

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Continuous wave and ultrafast laser combined annealing for efficient recrystallization of amorphous silicon

  • 期刊论文

  • 发表日期：

    2025年12月10日

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  • Seok Young Ji,
  • Won-Sup Lee,
  • Hyunmin Cho,
  • Won Seok Chang

摘要

The semiconductor industry is transitioning from two-dimensional (2D) to three-dimensional (3D) structures to enhance integrated circuits’ performance and density. In this study, a dual-beam laser system combining femtosecond (Fs) and continuous wave (CW) lasers was used to efficiently recrystallize amorphous silicon into high-quality polycrystalline silicon (poly-Si). The Fs laser applies localized heat in short bursts to avoid thermal damage, while the CW laser provides sustained energy to facilitate recrystallization. Experimental results and COMSOL simulations demonstrate the dual-beam system’s effectiveness in producing poly-Si with minimal thermal impact on adjacent components. Raman spectroscopy confirms the quality of the poly-Si, showing a peak close to single-crystal silicon (518.0 cm− 1). A fabricated photodetector using nanostructured poly-Si exhibited responsivity comparable to commercial silicon photodiodes, highlighting the practical applications of our method. The dual-beam laser system offers a promising solution for future semiconductor technologies by minimizing thermal damage and ensuring effective recrystallization.