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<p>The present article employs a theoretical approach based on the transfer matrix method to investigate the impact of defect layers on electronic states in CdTe/CdMnTe multi-quantum wells (MQWs). Incorporating one or two defect layers into periodic structures composed of CdTe quantum wells and CdMnTe barriers alters the band structure, leading to the formation of localized states within the band gaps. The study also demonstrates that defect thickness and concentration significantly influence the formation of localized states within the band gaps. Thicker defects tend to shift the energies of these states toward lower values. Conversely, increasing the defect concentration raises the energies of the localized states. Configurations with identical defect types can yield highly transmissive localized states under specific combinations of thickness and concentration. In addition, structures incorporating different types of defects exhibit distinctive patterns of localized states, particularly when defect parameters are carefully optimized. These findings highlight the potential of MQWs for use in frequency-selective filters, waveguides, and photonic devices, emphasizing the crucial role of defect engineering in tailoring electronic properties for advanced technologies.</p>

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High-performance electronic transfer in Multi-Quantum wells induced by two defect layers

  • 期刊论文

  • 发表日期：

    2025年11月25日

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  • Abdelouahid Ezzarfi,
  • Yassine Bouchafra,
  • Fatima Zahra Elamri,
  • Youssef Ben-Ali,
  • Ahmed Sali,
  • Driss Bria

摘要

The present article employs a theoretical approach based on the transfer matrix method to investigate the impact of defect layers on electronic states in CdTe/CdMnTe multi-quantum wells (MQWs). Incorporating one or two defect layers into periodic structures composed of CdTe quantum wells and CdMnTe barriers alters the band structure, leading to the formation of localized states within the band gaps. The study also demonstrates that defect thickness and concentration significantly influence the formation of localized states within the band gaps. Thicker defects tend to shift the energies of these states toward lower values. Conversely, increasing the defect concentration raises the energies of the localized states. Configurations with identical defect types can yield highly transmissive localized states under specific combinations of thickness and concentration. In addition, structures incorporating different types of defects exhibit distinctive patterns of localized states, particularly when defect parameters are carefully optimized. These findings highlight the potential of MQWs for use in frequency-selective filters, waveguides, and photonic devices, emphasizing the crucial role of defect engineering in tailoring electronic properties for advanced technologies.