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<p>Understanding transient ion dynamics in electrolyte-gated transistors (EGTs) is essential for predicting their electrical behavior. Ions respond slower than charge carriers to electric fields, sometimes causing transient currents that disrupt steady-state operation. Although prior studies focused on transient current and transient time, achieving steady-state conditions during transfer and output curve measurements remains challenging, indicating gaps in the understanding of ion-charge carrier interactions. This work investigates electrical characterization rather than device structure, revealing how scan rate significantly influences transfer curves in organic electrochemical transistors (OECTs), with transient currents impacting its performance. To do it, we fabricated well-established EGTs based on the semiconducting polymer poly(3-hexylthiophene-2,5diyl) (P3HT), focusing on understanding the fundamental processes that occur in device operation rather than optimizing materials or device structure. We also highlight the importance of reporting measurement history, since increasing and decreasing scan rate sequences yield asymmetric results due to retention effects, likely from ion doping. The transient time (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\tau\)</EquationSource> </InlineEquation>) was analyzed under square-wave gate voltages, showing to depend also on gate bias, whether into accumulation or transition between accumulation and depletion regimes. These findings demonstrate that EGT’s performance is influenced by charge transport regime transitions, scan rates, and prior measurements. Notably, a retention effect suggests that performing a transfer curve at a low scan rate induces permanent changes, which can then be leveraged in subsequent OECT’s measurements to achieve faster response time. This study provides new insights into optimizing EGT’s operation through controlled ion dynamics.</p>

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Impact of transient current on transfer curve in organic electrochemical transistors

  • 期刊论文

  • 发表日期：

    2025年12月4日

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  • Hélio José Lucas Jr,
  • José Pedro Mansueto Serbena,
  • Keli Fabiana Seidel

摘要

Understanding transient ion dynamics in electrolyte-gated transistors (EGTs) is essential for predicting their electrical behavior. Ions respond slower than charge carriers to electric fields, sometimes causing transient currents that disrupt steady-state operation. Although prior studies focused on transient current and transient time, achieving steady-state conditions during transfer and output curve measurements remains challenging, indicating gaps in the understanding of ion-charge carrier interactions. This work investigates electrical characterization rather than device structure, revealing how scan rate significantly influences transfer curves in organic electrochemical transistors (OECTs), with transient currents impacting its performance. To do it, we fabricated well-established EGTs based on the semiconducting polymer poly(3-hexylthiophene-2,5diyl) (P3HT), focusing on understanding the fundamental processes that occur in device operation rather than optimizing materials or device structure. We also highlight the importance of reporting measurement history, since increasing and decreasing scan rate sequences yield asymmetric results due to retention effects, likely from ion doping. The transient time ( \(\tau\) ) was analyzed under square-wave gate voltages, showing to depend also on gate bias, whether into accumulation or transition between accumulation and depletion regimes. These findings demonstrate that EGT’s performance is influenced by charge transport regime transitions, scan rates, and prior measurements. Notably, a retention effect suggests that performing a transfer curve at a low scan rate induces permanent changes, which can then be leveraged in subsequent OECT’s measurements to achieve faster response time. This study provides new insights into optimizing EGT’s operation through controlled ion dynamics.