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<p>This study reports the fabrication and optimization of p–n junction diodes based on antimony-doped tin oxide (ATO) and copper sulfide (CuS) thin films prepared via spray pyrolysis for optoelectronic applications. ATO was synthesized as the n-type layer at varying substrate temperatures (450–525&#xa0;°C), while CuS, serving as the p-type layer, was deposited at 200–350&#xa0;°C. Structural, morphological, electrical, and optical properties were systematically investigated using XRD, SEM, EDX, XPS, UV–Vis–NIR spectroscopy, and Hall effect measurements. Optimal crystallinity, surface uniformity, and conductivity in ATO films were achieved at 500&#xa0;°C, whereas CuS films deposited at 250&#xa0;°C exhibited superior p-type conductivity and favorable grain morphology. The ATO/CuS p–n diodes demonstrated clear rectification behavior, with the device fabricated at 250&#xa0;°C CuS deposition showing the best performance, characterized by a low ideality factor (<i>n</i> = 1.3), reduced series resistance, and a barrier height of 0.543&#xa0;eV. The results highlight the potential of ATO/CuS junctions as low-cost, eco-friendly, and scalable alternatives for optoelectronic devices.</p>

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Fabrication of ATO/CuS Thin-Film p-n junction diodes via spray pyrolysis for optoelectronic applications

  • 期刊论文

  • 发表日期：

    2025年10月28日

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  • Seyed Reza Jebraily,
  • S. M. Rozati

摘要

This study reports the fabrication and optimization of p–n junction diodes based on antimony-doped tin oxide (ATO) and copper sulfide (CuS) thin films prepared via spray pyrolysis for optoelectronic applications. ATO was synthesized as the n-type layer at varying substrate temperatures (450–525 °C), while CuS, serving as the p-type layer, was deposited at 200–350 °C. Structural, morphological, electrical, and optical properties were systematically investigated using XRD, SEM, EDX, XPS, UV–Vis–NIR spectroscopy, and Hall effect measurements. Optimal crystallinity, surface uniformity, and conductivity in ATO films were achieved at 500 °C, whereas CuS films deposited at 250 °C exhibited superior p-type conductivity and favorable grain morphology. The ATO/CuS p–n diodes demonstrated clear rectification behavior, with the device fabricated at 250 °C CuS deposition showing the best performance, characterized by a low ideality factor (n = 1.3), reduced series resistance, and a barrier height of 0.543 eV. The results highlight the potential of ATO/CuS junctions as low-cost, eco-friendly, and scalable alternatives for optoelectronic devices.