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<p>The Czochralski (CZ) method is the most widely used technique for producing monocrystalline silicon. It is employed to manufacture large, high-quality solar-grade silicon wafers. As the photovoltaic industry rapidly develops, stringent requirements are placed on both cost control and quality management in monocrystalline silicon production. This study established a two-dimensional axisymmetric model of the CZ furnace to evaluate new materials for the cold side of the heat shield. Numerical simulations show that using materials with low thermal conductivity and low surface emissivity on the cold side significantly improves the thermal field distribution. Specifically, there is a 5.4% reduction in side heater power consumption and a 16% decrease in the heat load on the water-cooled jacket. This leads to substantial energy savings with minimal retrofitting costs. As the thermal conductivity and emissivity of the material are reduced, a decrease in defects at the silicon-liquid interface and a 0.5&#xa0;MPa reduction in lateral thermal stress are observed. These findings demonstrate that co-optimizing heat shield materials and surface emissivity can enhance crystal quality while reducing power consumption during the constant-diameter growth stage.</p>

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Numerical simulation of the effect of a new type of heat shield composite material on the crystal quality of Czochralski silicon crystal

  • 期刊论文

  • 发表日期：

    2025年10月28日

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  • Yaning Zhao,
  • Wenxia Zhang,
  • Hui Zhang,
  • Xuenan Zhang,
  • Xinjian Xie,
  • Yi Fang,
  • Hongshi Li,
  • Guifeng Chen

摘要

The Czochralski (CZ) method is the most widely used technique for producing monocrystalline silicon. It is employed to manufacture large, high-quality solar-grade silicon wafers. As the photovoltaic industry rapidly develops, stringent requirements are placed on both cost control and quality management in monocrystalline silicon production. This study established a two-dimensional axisymmetric model of the CZ furnace to evaluate new materials for the cold side of the heat shield. Numerical simulations show that using materials with low thermal conductivity and low surface emissivity on the cold side significantly improves the thermal field distribution. Specifically, there is a 5.4% reduction in side heater power consumption and a 16% decrease in the heat load on the water-cooled jacket. This leads to substantial energy savings with minimal retrofitting costs. As the thermal conductivity and emissivity of the material are reduced, a decrease in defects at the silicon-liquid interface and a 0.5 MPa reduction in lateral thermal stress are observed. These findings demonstrate that co-optimizing heat shield materials and surface emissivity can enhance crystal quality while reducing power consumption during the constant-diameter growth stage.