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<p>This study investigates the localized electronic states and <i>Spectral Weight Transfer</i> (SWT) in hydrogenated amorphous silicon (a-Si: H) thin films, which are critical for understanding charge transport and optical absorption in disordered semiconductor systems. Using a combination of <i>X-ray Photoelectron Spectroscopy</i> (XPS), Spectroscopic Ellipsometry (SE), and <i>Field-Emission Scanning Electron Microscopy</i> (FE-SEM), we analyze the correlation between microstructural properties, electronic state distribution, and optical transitions across a wide spectral range. The presence of localized states within the band gap, particularly tail and defect states, is characterized through detailed valence band analysis and optical modeling. A systematic shift in the spectral weight from low-energy to high-energy transitions is observed with varying film conditions, indicating the evolution of the electronic density of states and structural disorder. Spectroscopic ellipsometry data reveal changes in the optical band gap and critical point energies, supporting the presence of disorder-induced band tailing. The XPS results confirm modifications in the chemical bonding environment, correlating with changes in localized state density. FE-SEM imaging provides complementary morphological insights that reinforce the observed spectroscopic trends. The findings highlight the significant role of disorder and hydrogenation in modulating the electronic structure of a-Si: H, with implications for optimizing its performance in photovoltaic and optoelectronic applications. These results contribute to a deeper understanding of electronic localization phenomena and energy transfer mechanisms in amorphous semiconductors.</p>

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Spectral weeight transfer and band structure modification in a-Si: H revealed by XPS and spectroscopic ellipsometry

  • 期刊论文

  • 发表日期：

    2025年11月5日

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  • Soni Prayogi,
  • Muhammad A

摘要

This study investigates the localized electronic states and Spectral Weight Transfer (SWT) in hydrogenated amorphous silicon (a-Si: H) thin films, which are critical for understanding charge transport and optical absorption in disordered semiconductor systems. Using a combination of X-ray Photoelectron Spectroscopy (XPS), Spectroscopic Ellipsometry (SE), and Field-Emission Scanning Electron Microscopy (FE-SEM), we analyze the correlation between microstructural properties, electronic state distribution, and optical transitions across a wide spectral range. The presence of localized states within the band gap, particularly tail and defect states, is characterized through detailed valence band analysis and optical modeling. A systematic shift in the spectral weight from low-energy to high-energy transitions is observed with varying film conditions, indicating the evolution of the electronic density of states and structural disorder. Spectroscopic ellipsometry data reveal changes in the optical band gap and critical point energies, supporting the presence of disorder-induced band tailing. The XPS results confirm modifications in the chemical bonding environment, correlating with changes in localized state density. FE-SEM imaging provides complementary morphological insights that reinforce the observed spectroscopic trends. The findings highlight the significant role of disorder and hydrogenation in modulating the electronic structure of a-Si: H, with implications for optimizing its performance in photovoltaic and optoelectronic applications. These results contribute to a deeper understanding of electronic localization phenomena and energy transfer mechanisms in amorphous semiconductors.